Information card for entry 4078197
Formula |
C30 H52 Si4 |
Calculated formula |
C30 H52 Si4 |
SMILES |
[Si]1([Si](c2c([Si](CC[Si](c3c1cccc3)(C(C)C)C)(C(C)C)C)cccc2)(C(C)C)C)(C(C)C)C |
Title of publication |
Stereochemistry of Disilanylene-Containing Cyclic Compounds. Palladium-Catalyzed Reactions ofcis- andtrans-3,4-Benzo-1,2-diisopropyl-1,2-dimethyl-1,2-disilacyclobut-3-ene with Ethylene |
Authors of publication |
Naka, Akinobu; Ohshita, Joji; Miyazaki, Eigo; Miura, Toshiko; Kobayashi, Hisayoshi; Ishikawa, Mitsuo |
Journal of publication |
Organometallics |
Year of publication |
2012 |
Journal volume |
31 |
Journal issue |
9 |
Pages of publication |
3492 |
a |
13.2772 ± 0.0009 Å |
b |
13.791 ± 0.0008 Å |
c |
18.256 ± 0.001 Å |
α |
90° |
β |
102.145 ± 0.001° |
γ |
90° |
Cell volume |
3268 ± 0.3 Å3 |
Cell temperature |
150.1 K |
Ambient diffraction temperature |
150 K |
Number of distinct elements |
3 |
Space group number |
14 |
Hermann-Mauguin space group symbol |
P 1 21/a 1 |
Hall space group symbol |
-P 2yab |
Residual factor for significantly intense reflections |
0.102 |
Weighted residual factors for all reflections included in the refinement |
0.116 |
Goodness-of-fit parameter for all reflections included in the refinement |
3.165 |
Diffraction radiation wavelength |
0.7107 Å |
Diffraction radiation type |
MoKα |
Has coordinates |
Yes |
Has disorder |
No |
Has Fobs |
No |
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https://www.crystallography.net/4078197.html