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Searching journal of publication like 'Chemistry of Materials' volume of publication is 21
COD ID  |
Links | Formula  |
Space group |
Cell parameters | Cell volume |
Bibliography |
|---|---|---|---|---|---|---|
| 4000968 | CIF | C30 H20 F2 N2 O4 | P 1 21/n 1 | 7.8416; 4.8947; 29.7907 90; 97.227; 90 | 1134.35 | Jung, Byung Jun; Sun, Jia; Lee, Taegweon; Sarjeant, Amy; Katz, Howard E. Low-Temperature-Processible, Transparent, and Air-Operable n-Channel Fluorinated Phenylethylated Naphthalenetetracarboxylic Diimide Semiconductors Applied to Flexible Transistors Chemistry of Materials, 2009, 21, 94 |
| 4000969 | CIF | C30 H18 F4 N2 O4 | P 1 21/n 1 | 6.622; 22.2242; 7.8567 90; 92.006; 90 | 1155.55 | Jung, Byung Jun; Sun, Jia; Lee, Taegweon; Sarjeant, Amy; Katz, Howard E. Low-Temperature-Processible, Transparent, and Air-Operable n-Channel Fluorinated Phenylethylated Naphthalenetetracarboxylic Diimide Semiconductors Applied to Flexible Transistors Chemistry of Materials, 2009, 21, 94 |
| 4000970 | CIF | Ba3 Cu14.35 Se8.55 Te2.45 | R -3 m :H | 12.1718; 12.1718; 28.197 90; 90; 120 | 3617.8 | Kuropatwa, Bryan; Cui, Yanjie; Assoud, Abdeljalil; Kleinke, Holger Crystal Structure and Physical Properties of the New Selenide−Tellurides Ba3Cu17−x(Se,Te)11 Chemistry of Materials, 2009, 21, 88 |
| 4000971 | CIF | Ba3 Cu14.38 Se8.3 Te2.7 | R -3 m :H | 12.1897; 12.1897; 28.2087 90; 90; 120 | 3629.9 | Kuropatwa, Bryan; Cui, Yanjie; Assoud, Abdeljalil; Kleinke, Holger Crystal Structure and Physical Properties of the New Selenide−Tellurides Ba3Cu17−x(Se,Te)11 Chemistry of Materials, 2009, 21, 88 |
| 4000972 | CIF | Ba3 Cu15.05 Se7.73 Te3.27 | R -3 m :H | 12.2339; 12.2339; 28.2819 90; 90; 120 | 3665.8 | Kuropatwa, Bryan; Cui, Yanjie; Assoud, Abdeljalil; Kleinke, Holger Crystal Structure and Physical Properties of the New Selenide−Tellurides Ba3Cu17−x(Se,Te)11 Chemistry of Materials, 2009, 21, 88 |
| 4000973 | CIF | Fe3 N1.08 | P 3 1 2 | 4.7241; 4.7241; 4.3862 90; 90; 120 | 84.773 | Niewa, Rainer; Rau, Dieter; Wosylus, Aron; Meier, Katrin; Hanfland, Michael; Wessel, Michael; Dronskowski, Richard; Dzivenko, Dmytro A.; Riedel, Ralf; Schwarz, Ulrich High-Pressure, High-Temperature Single-Crystal Growth, Ab initio Electronic Structure Calculations, and Equation of State of ε-Fe3N1+x Chemistry of Materials, 2009, 21, 392 |
| 4000974 | CIF | Fe3 N1.2 | P 63 2 2 | 4.7241; 4.7241; 4.3862 90; 90; 120 | 84.773 | Niewa, Rainer; Rau, Dieter; Wosylus, Aron; Meier, Katrin; Hanfland, Michael; Wessel, Michael; Dronskowski, Richard; Dzivenko, Dmytro A.; Riedel, Ralf; Schwarz, Ulrich High-Pressure, High-Temperature Single-Crystal Growth, Ab initio Electronic Structure Calculations, and Equation of State of ε-Fe3N1+x Chemistry of Materials, 2009, 21, 392 |
| 4000975 | CIF | C11 H44 In6 N11 Te9 | P 61 | 11.6147; 11.6147; 51.9135 90; 90; 120 | 6064.9 | Zhang, Qichun; Chung, In; Jang, Joon I.; Ketterson, John B.; Kanatzidis, Mercouri G. A Polar and Chiral Indium Telluride Featuring Supertetrahedral T2 Clusters and Nonlinear Optical Second Harmonic Generation Chemistry of Materials, 2009, 21, 12 |
| 4000976 | CIF | C78 H62 Ag B F4 S4 Si | P b c a | 17.6591; 17.6477; 42.628 90; 90; 90 | 13285 | Huang, Guo; Yang, Chen; Xu, Zhengtao; Wu, Haohan; Li, Jing; Zeller, Matthias; Hunter, Allen D.; Chui, Stephen Sin-Yin; Che, Chi-Ming Shape-Selective Sorption and Fluorescence Sensing of Aromatics in a Flexible Network of Tetrakis[(4-methylthiophenyl)ethynyl]silane and AgBF4 Chemistry of Materials, 2009, 21, 541 |
| 4000977 | CIF | C32 H18 O2 | P c c n | 15.92; 18.508; 6.9299 90; 90; 90 | 2041.9 | Kobayashi, Norihito; Sasaki, Mari; Nomoto, Kazumasa Stableperi-Xanthenoxanthene Thin-Film Transistors with Efficient Carrier Injection Chemistry of Materials, 2009, 21, 552 |
| 4000978 | CIF | C22 H34 F12 Mg O12 | P -1 | 8.952; 9.036; 11.98 110.44; 108.64; 97.06 | 829.9 | Fragalà, Maria E.; Toro, Roberta G.; Rossi, Patrizia; Dapporto, Paolo; Malandrino, Graziella Synthesis, Characterization, and Mass Transport Properties of a Self-Generating Single-Source Magnesium Precursor for MOCVD of MgF2Films Chemistry of Materials, 2009, 21, 2062 |
| 4000979 | CIF | C14 H24 O22 S2 Yb4 | I b a m | 12.5401; 35.6519; 7.0347 90; 90; 90 | 3145.1 | Gándara, Felipe; Puebla, Enrique Gutiérrez; Iglesias, Marta; Proserpio, Davide M.; Snejko, Natalia; Monge, M. Ángeles Controlling the Structure of Arenedisulfonates toward Catalytically Active Materials Chemistry of Materials, 2009, 21, 655 |
| 4000980 | CIF | C14 H9 O10 S2 Yb | P -1 | 7.3843; 7.8665; 13.7366 86.119; 86.097; 86.398 | 792.9 | Gándara, Felipe; Puebla, Enrique Gutiérrez; Iglesias, Marta; Proserpio, Davide M.; Snejko, Natalia; Monge, M. Ángeles Controlling the Structure of Arenedisulfonates toward Catalytically Active Materials Chemistry of Materials, 2009, 21, 655 |
| 4000981 | CIF | C30 H40 Se2 | C 1 2/c 1 | 56.717; 4.1874; 11.1892 90; 94.912; 90 | 2647.6 | Izawa, Takafumi; Miyazaki, Eigo; Takimiya, Kazuo Solution-Processible Organic Semiconductors Based on Selenophene-Containing Heteroarenes, 2,7-Dialkyl[1]benzoselenopheno[3,2-b][1]benzoselenophenes (Cn-BSBSs): Syntheses, Properties, Molecular Arrangements, and Field-Effect Transistor Characteristics Chemistry of Materials, 2009, 21, 903 |
| 4000982 | CIF | C34 H48 Se2 | P 1 21/n 1 | 5.6136; 7.2956; 36.003 90; 92.881; 90 | 1472.6 | Izawa, Takafumi; Miyazaki, Eigo; Takimiya, Kazuo Solution-Processible Organic Semiconductors Based on Selenophene-Containing Heteroarenes, 2,7-Dialkyl[1]benzoselenopheno[3,2-b][1]benzoselenophenes (Cn-BSBSs): Syntheses, Properties, Molecular Arrangements, and Field-Effect Transistor Characteristics Chemistry of Materials, 2009, 21, 903 |
| 4000983 | CIF | C38 H56 Se2 | C 1 2/c 1 | 74.517; 4.4014; 10.6926 90; 94.5; 90 | 3496.1 | Izawa, Takafumi; Miyazaki, Eigo; Takimiya, Kazuo Solution-Processible Organic Semiconductors Based on Selenophene-Containing Heteroarenes, 2,7-Dialkyl[1]benzoselenopheno[3,2-b][1]benzoselenophenes (Cn-BSBSs): Syntheses, Properties, Molecular Arrangements, and Field-Effect Transistor Characteristics Chemistry of Materials, 2009, 21, 903 |
| 4000984 | CIF | C42 H64 Se2 | P 1 21/c 1 | 5.5648; 7.3316; 45.334 90; 93.289; 90 | 1846.5 | Izawa, Takafumi; Miyazaki, Eigo; Takimiya, Kazuo Solution-Processible Organic Semiconductors Based on Selenophene-Containing Heteroarenes, 2,7-Dialkyl[1]benzoselenopheno[3,2-b][1]benzoselenophenes (Cn-BSBSs): Syntheses, Properties, Molecular Arrangements, and Field-Effect Transistor Characteristics Chemistry of Materials, 2009, 21, 903 |
| 4000985 | CIF | B2 H8 Mg | P 61 2 2 | 10.354; 10.354; 37.055 90; 90; 120 | 3440.3 | Filinchuk, Yaroslav; Černý, Radovan; Hagemann, Hans Insight into Mg(BH4)2with Synchrotron X-ray Diffraction: Structure Revision, Crystal Chemistry, and Anomalous Thermal Expansion Chemistry of Materials, 2009, 21, 925 |
| 4000986 | CIF | C32 H38 Cl2 Zr | P -1 | 9.146; 9.965; 17.876 103.623; 91.975; 116.457 | 1399.2 | Sun, Luyi; Liu, Jia; Kirumakki, Sharath R.; Schwerdtfeger, Eric D.; Howell, Robert J.; Al-Bahily, Khalid; Miller, Stephen A.; Clearfield, Abraham; Sue, Hung-Jue Polypropylene Nanocomposites Based on Designed Synthetic Nanoplatelets Chemistry of Materials, 2009, 21, 1154 |
| 4000987 | CIF | Bi Cs Nb2 O7 | P 21 a m | 5.49945; 5.42638; 11.3846 90; 90; 90 | 339.74 | Goff, Richard J.; Keeble, Dean; Thomas, Pamela A.; Ritter, Clemens; Morrison, Finlay D.; Lightfoot, Philip Leakage and Proton Conductivity in the Predicted Ferroelectric CsBiNb2O7 Chemistry of Materials, 2009, 21, 1296 |
| 4000988 | CIF | Bi Cs Nb2 O7 | P 21 a m | 5.52598; 5.4558; 11.4457 90; 90; 90 | 345.07 | Goff, Richard J.; Keeble, Dean; Thomas, Pamela A.; Ritter, Clemens; Morrison, Finlay D.; Lightfoot, Philip Leakage and Proton Conductivity in the Predicted Ferroelectric CsBiNb2O7 Chemistry of Materials, 2009, 21, 1296 |
| 4000989 | CIF | Bi Cs Nb2 O7 | P 21 a m | 5.55375; 5.4966; 11.5086 90; 90; 90 | 351.32 | Goff, Richard J.; Keeble, Dean; Thomas, Pamela A.; Ritter, Clemens; Morrison, Finlay D.; Lightfoot, Philip Leakage and Proton Conductivity in the Predicted Ferroelectric CsBiNb2O7 Chemistry of Materials, 2009, 21, 1296 |
| 4000990 | CIF | Bi Cs Nb2 O7 | P 21 a m | 5.49484; 5.42153; 11.3721 90; 90; 90 | 338.78 | Goff, Richard J.; Keeble, Dean; Thomas, Pamela A.; Ritter, Clemens; Morrison, Finlay D.; Lightfoot, Philip Leakage and Proton Conductivity in the Predicted Ferroelectric CsBiNb2O7 Chemistry of Materials, 2009, 21, 1296 |
| 4000991 | CIF | C18 H16 O8 Re S8 | P -1 | 14.447; 12.496; 14.806 70.521; 82.682; 88.718 | 2498.8 | Shao, Xiangfeng; Yoshida, Yukihiro; Nakano, Yoshiaki; Yamochi, Hideki; Sakata, Masafumi; Maesato, Mitsuhiko; Otsuka, Akihiro; Saito, Gunzi; Koshihara, Shin-ya Prediction of the Electronic Structure via Molecular Stacking Mode of Radical Cation Salts Based on Asymmetric Donor Molecule MeEDO-TTF Chemistry of Materials, 2009, 21, 1085 |
| 4000992 | CIF | C18 H16 O8 Re S8 | P -1 | 7.272; 12.513; 14.88 70.492; 82.574; 89.032 | 1265.1 | Shao, Xiangfeng; Yoshida, Yukihiro; Nakano, Yoshiaki; Yamochi, Hideki; Sakata, Masafumi; Maesato, Mitsuhiko; Otsuka, Akihiro; Saito, Gunzi; Koshihara, Shin-ya Prediction of the Electronic Structure via Molecular Stacking Mode of Radical Cation Salts Based on Asymmetric Donor Molecule MeEDO-TTF Chemistry of Materials, 2009, 21, 1085 |
| 4000993 | CIF | C18 H16 O8 Re S8 | P -1 | 7.302; 12.531; 14.911 70.475; 82.402; 89.078 | 1274.1 | Shao, Xiangfeng; Yoshida, Yukihiro; Nakano, Yoshiaki; Yamochi, Hideki; Sakata, Masafumi; Maesato, Mitsuhiko; Otsuka, Akihiro; Saito, Gunzi; Koshihara, Shin-ya Prediction of the Electronic Structure via Molecular Stacking Mode of Radical Cation Salts Based on Asymmetric Donor Molecule MeEDO-TTF Chemistry of Materials, 2009, 21, 1085 |
| 4000994 | CIF | C18 H16 O8 Re S8 | P -1 | 7.332; 12.552; 14.943 70.452; 82.256; 89.115 | 1283.5 | Shao, Xiangfeng; Yoshida, Yukihiro; Nakano, Yoshiaki; Yamochi, Hideki; Sakata, Masafumi; Maesato, Mitsuhiko; Otsuka, Akihiro; Saito, Gunzi; Koshihara, Shin-ya Prediction of the Electronic Structure via Molecular Stacking Mode of Radical Cation Salts Based on Asymmetric Donor Molecule MeEDO-TTF Chemistry of Materials, 2009, 21, 1085 |
| 4000995 | CIF | C18 H8 O8 Re S8 | P 1 21/n 1 | 8.415; 21.17; 29.326 90; 90.6; 90 | 5224 | Shao, Xiangfeng; Yoshida, Yukihiro; Nakano, Yoshiaki; Yamochi, Hideki; Sakata, Masafumi; Maesato, Mitsuhiko; Otsuka, Akihiro; Saito, Gunzi; Koshihara, Shin-ya Prediction of the Electronic Structure via Molecular Stacking Mode of Radical Cation Salts Based on Asymmetric Donor Molecule MeEDO-TTF Chemistry of Materials, 2009, 21, 1085 |
| 4000996 | CIF | C46 H32 N6 O8 S16 | P 1 21/a 1 | 8.382; 21.511; 16.292 90; 97.587; 90 | 2911.8 | Shao, Xiangfeng; Yoshida, Yukihiro; Nakano, Yoshiaki; Yamochi, Hideki; Sakata, Masafumi; Maesato, Mitsuhiko; Otsuka, Akihiro; Saito, Gunzi; Koshihara, Shin-ya Prediction of the Electronic Structure via Molecular Stacking Mode of Radical Cation Salts Based on Asymmetric Donor Molecule MeEDO-TTF Chemistry of Materials, 2009, 21, 1085 |
| 4000997 | CIF | C45 H40 Cl8 Co2 O10 S20 | P 1 | 8.351; 14.372; 15.421 112.353; 100.095; 96.184 | 1654.1 | Shao, Xiangfeng; Yoshida, Yukihiro; Nakano, Yoshiaki; Yamochi, Hideki; Sakata, Masafumi; Maesato, Mitsuhiko; Otsuka, Akihiro; Saito, Gunzi; Koshihara, Shin-ya Prediction of the Electronic Structure via Molecular Stacking Mode of Radical Cation Salts Based on Asymmetric Donor Molecule MeEDO-TTF Chemistry of Materials, 2009, 21, 1085 |
| 4000998 | CIF | C45 H40 Cl8 Mn2 O10 S20 | P 1 | 8.383; 14.457; 15.359 111.965; 99.799; 96.161 | 1671.1 | Shao, Xiangfeng; Yoshida, Yukihiro; Nakano, Yoshiaki; Yamochi, Hideki; Sakata, Masafumi; Maesato, Mitsuhiko; Otsuka, Akihiro; Saito, Gunzi; Koshihara, Shin-ya Prediction of the Electronic Structure via Molecular Stacking Mode of Radical Cation Salts Based on Asymmetric Donor Molecule MeEDO-TTF Chemistry of Materials, 2009, 21, 1085 |
| 4000999 | CIF | C44 H30 | P -1 | 10.9878; 11.279; 12.8651 111.898; 90.934; 97.886 | 1461.41 | Ye, Shanghui; Liu, Yunqi; Di, Chong-an; Xi, Hongxia; Wu, Weiping; Wen, Yugen; Lu, Kun; Du, Chunyan; Liu, Ying; Yu, Gui Wide-Energy-Gap Host Materials for Blue Phosphorescent Organic Light-Emitting Diodes Chemistry of Materials, 2009, 21, 1333 |
| 4001000 | CIF | C51 H38 | C m c 21 | 22.474; 10.6415; 14.7196 90; 90; 90 | 3520.3 | Ye, Shanghui; Liu, Yunqi; Di, Chong-an; Xi, Hongxia; Wu, Weiping; Wen, Yugen; Lu, Kun; Du, Chunyan; Liu, Ying; Yu, Gui Wide-Energy-Gap Host Materials for Blue Phosphorescent Organic Light-Emitting Diodes Chemistry of Materials, 2009, 21, 1333 |
| 4001001 | CIF | Bi0.78 Li2 O12 Rh6 | P 63/m | 9.1263; 9.1263; 2.9899 90; 90; 120 | 215.664 | Mizoguchi, Hiroshi; Zakharov, L. N.; Marshall, W. J.; Sleight, A. W.; Subramanian, M. A. AA′2Rh6O12: A New Family of Rhodium Oxides Exhibiting High Thermopower Coupled with High Electrical Conductivity Chemistry of Materials, 2009, 21, 994 |
| 4001002 | CIF | Bi0.75 O12 Rh4.92 Sc2.18 | P 63/m | 9.202; 9.202; 2.987 90; 90; 120 | 219.04 | Mizoguchi, Hiroshi; Zakharov, L. N.; Marshall, W. J.; Sleight, A. W.; Subramanian, M. A. AA′2Rh6O12: A New Family of Rhodium Oxides Exhibiting High Thermopower Coupled with High Electrical Conductivity Chemistry of Materials, 2009, 21, 994 |
| 4001003 | CIF | Be Bi0.34 O6 Rh3 | P 63/m | 8.9927; 8.9927; 3.0604 90; 90; 120 | 214.33 | Mizoguchi, Hiroshi; Zakharov, L. N.; Marshall, W. J.; Sleight, A. W.; Subramanian, M. A. AA′2Rh6O12: A New Family of Rhodium Oxides Exhibiting High Thermopower Coupled with High Electrical Conductivity Chemistry of Materials, 2009, 21, 994 |
| 4001004 | CIF | Li2 O12 Pb0.76 Rh6 | P 63/m | 9.129; 9.129; 2.985 90; 90; 120 | 215.4 | Mizoguchi, Hiroshi; Zakharov, L. N.; Marshall, W. J.; Sleight, A. W.; Subramanian, M. A. AA′2Rh6O12: A New Family of Rhodium Oxides Exhibiting High Thermopower Coupled with High Electrical Conductivity Chemistry of Materials, 2009, 21, 994 |
| 4001005 | CIF | Ga2.79 N0.76 O3.05 | F d -3 m :2 | 8.2783; 8.2783; 8.2783 90; 90; 90 | 567.31 | Huppertz, Hubert; Hering, Stefanie A.; Zvoriste, Carmen E.; Lauterbach, Stefan; Oeckler, Oliver; Riedel, Ralf; Kinski, Isabel High-Pressure Synthesis, Electron Energy-Loss Spectroscopy Investigations, and Single Crystal Structure Determination of a Spinel-Type Gallium Oxonitride Ga2.79◻0.21(O3.05N0.76◻0.19) Chemistry of Materials, 2009, 21, 2101 |
| 4001006 | CIF | C28 H30 Fe N10 O2 S2 | P -1 | 8.8298; 12.2817; 14.3159 91.086; 103.967; 95.266 | 1498.87 | Bonnet, Sylvestre; Molnár, Gábor; Sanchez Costa, José; Siegler, Maxime A.; Spek, Anthony L.; Bousseksou, Azedine; Fu, Wen-Tian; Gamez, Patrick; Reedijk, Jan Influence of Sample Preparation, Temperature, Light, and Pressure on the Two-Step Spin Crossover Mononuclear Compound [Fe(bapbpy)(NCS)2] Chemistry of Materials, 2009, 21, 1123 |
| 4001007 | CIF | K0.05 La0.91 Nb O4.1 | P 1 21/n 1 | 14.0652; 3.9413; 6.7477 90; 91.283; 90 | 373.966 | Nyman, May; Rodriguez, Mark A.; Alam, Todd M.; Anderson, Travis M.; Ambrosini, Andrea Aqueous Synthesis and Structural Comparison of Rare Earth Niobates and Tantalates: (La,K,◻)2Nb2O7−x(OH)2and Ln2Ta2O7(OH)2(◻ = vacancy; Ln = La−Sm) Chemistry of Materials, 2009, 21, 2201 |
| 4001008 | CIF | C20 H14 N2 | P -1 | 5.752; 8.88; 13.167 87.439; 84.837; 86.219 | 667.8 | Tang, Qin; Zhang, Dieqing; Wang, Shenglong; Ke, Ning; Xu, Jianbin; Yu, Jimmy C.; Miao, Qian A Meaningful Analogue of Pentacene: Charge Transport, Polymorphs, and Electronic Structures of Dihydrodiazapentacene Chemistry of Materials, 2009, 21, 1400 |
| 4001009 | CIF | C60 H30 B2 F24 O6 | C 1 2/c 1 | 25.0681; 9.2334; 23.8407 90; 100.205; 90 | 5431 | Sarkar, Arindam; Pal, Sushanta K.; Itkis, Mikhail E.; Liao, Puhong; Tham, Fook S.; Donnadieu, Bruno; Haddon, Robert C. Methoxy-Substituted Phenalenyl-Based Neutral Radical Molecular Conductor Chemistry of Materials, 2009, 21, 2226 |
| 4001010 | CIF | C54 H42 B2 O8 | P 1 21 1 | 14.9941; 9.1881; 15.3393 90; 100.575; 90 | 2077.36 | Sarkar, Arindam; Pal, Sushanta K.; Itkis, Mikhail E.; Liao, Puhong; Tham, Fook S.; Donnadieu, Bruno; Haddon, Robert C. Methoxy-Substituted Phenalenyl-Based Neutral Radical Molecular Conductor Chemistry of Materials, 2009, 21, 2226 |
| 4001011 | CIF | C54 H42 B2 O8 | P 1 21 1 | 15.0896; 9.2975; 15.4377 90; 100.947; 90 | 2126.43 | Sarkar, Arindam; Pal, Sushanta K.; Itkis, Mikhail E.; Liao, Puhong; Tham, Fook S.; Donnadieu, Bruno; Haddon, Robert C. Methoxy-Substituted Phenalenyl-Based Neutral Radical Molecular Conductor Chemistry of Materials, 2009, 21, 2226 |
| 4001012 | CIF | C30 H22 B O8 | P 1 21/c 1 | 17.22; 10.4078; 13.283 90; 100.181; 90 | 2343.1 | Sarkar, Arindam; Pal, Sushanta K.; Itkis, Mikhail E.; Liao, Puhong; Tham, Fook S.; Donnadieu, Bruno; Haddon, Robert C. Methoxy-Substituted Phenalenyl-Based Neutral Radical Molecular Conductor Chemistry of Materials, 2009, 21, 2226 |
| 4001013 | CIF | C30 H22 B O8 | P 1 21/c 1 | 17.324; 10.56; 13.652 90; 99.007; 90 | 2466.7 | Sarkar, Arindam; Pal, Sushanta K.; Itkis, Mikhail E.; Liao, Puhong; Tham, Fook S.; Donnadieu, Bruno; Haddon, Robert C. Methoxy-Substituted Phenalenyl-Based Neutral Radical Molecular Conductor Chemistry of Materials, 2009, 21, 2226 |
| 4001014 | CIF | C62 H34 B2 F24 O8 | P -1 | 12.655; 13.72; 18.273 73.905; 89.524; 80.516 | 3004.3 | Sarkar, Arindam; Pal, Sushanta K.; Itkis, Mikhail E.; Liao, Puhong; Tham, Fook S.; Donnadieu, Bruno; Haddon, Robert C. Methoxy-Substituted Phenalenyl-Based Neutral Radical Molecular Conductor Chemistry of Materials, 2009, 21, 2226 |
| 4001015 | CIF | O12 Rb Se2 V3 | P 63 | 7.1364; 7.1364; 11.4687 90; 90; 120 | 505.83 | Chang, Hong Young; Kim, Sang-Hwan; Ok, Kang Min; Halasyamani, P. Shiv New Polar Oxides: Synthesis, Characterization, Calculations, and Structure−Property Relationships in RbSe2V3O12and TlSe2V3O12 Chemistry of Materials, 2009, 21, 1654 |
| 4001016 | CIF | O12 Se2 Tl V3 | P 63 | 7.1248; 7.1248; 11.4287 90; 90; 120 | 502.43 | Chang, Hong Young; Kim, Sang-Hwan; Ok, Kang Min; Halasyamani, P. Shiv New Polar Oxides: Synthesis, Characterization, Calculations, and Structure−Property Relationships in RbSe2V3O12and TlSe2V3O12 Chemistry of Materials, 2009, 21, 1654 |
| 4001017 | CIF | C34 H38 S2 | C 1 2/c 1 | 64.229; 7.6301; 5.8399 90; 92.136; 90 | 2860 | Liu, Ping; Wu, Yiliang; Pan, Hualong; Li, Yuning; Gardner, Sandra; Ong, Beng S.; Zhu, Shiping Novel High-Performance Liquid-Crystalline Organic Semiconductors for Thin-Film Transistors Chemistry of Materials, 2009, 21, 2727 |
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