Crystallography Open Database

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Searching journal of publication like 'Physical Review Letters'

COD ID	Links	Formula	Space group	Cell parameters	Cell volume	Bibliography
9011638	CIF	He	I m -3 m	4.11; 4.11; 4.11 90; 90; 90	69.427	Schuch, A. F.; Mills, R. L. Structure of the gamma form of solid He4 Sample: at T = 1.73 K & P = .003 GPa Note: structure known as gamma phase Physical Review Letters, 1962, 8, 469-470
9011639	CIF	He	P 63/m m c	3.65; 3.65; 5.945 90; 90; 120	68.591	Schuch, A. F.; Mills, R. L. Structure of the gamma form of solid He4 Sample: at T = 1.73 K & P = .003 GPa Physical Review Letters, 1962, 8, 469-470
9011640	CIF	S	R -3 m :H	3.277; 3.277; 2.584 90; 90; 120	24.031	Luo, H.; Greene, R. G.; Ruoff, A. L. Beta-Po phase of sulfur at 162 GPa: X-ray diffraction study to 212 GPa Sample: at P = 206.5 GPa Note: this is known as the Beta-Po phase of sulfur, stable above 162 GPa Physical Review Letters, 1993, 71, 2943-2946
9011641	CIF	Cs	C m c e	11.205; 6.626; 6.595 90; 90; 90	489.641	Schwarz, U.; Takemura, K.; Hanfland, M.; Syassen, K. Crystal structure of cesium-V Locality: synthetic Sample: at P = 12 GPa Note: phase V Physical Review Letters, 1998, 81, 2711-2714
9011642	CIF	Cs	C m c e	10.879; 6.443; 6.389 90; 90; 90	447.827	Schwarz, U.; Takemura, K.; Hanfland, M.; Syassen, K. Crystal structure of cesium-V Locality: synthetic Sample: at P = 19.6 GPa Note: phase V Physical Review Letters, 1998, 81, 2711-2714
9011643	CIF	Cs	C m c e	10.641; 6.278; 6.249 90; 90; 90	417.459	Schwarz, U.; Takemura, K.; Hanfland, M.; Syassen, K. Crystal structure of cesium-V Locality: synthetic Sample: at P = 25.8 GPa Note: phase V Physical Review Letters, 1998, 81, 2711-2714
9011644	CIF	Si	C m c e	8.0242; 4.7961; 4.776 90; 90; 90	183.804	Hanfland, M.; Schwarz, U.; Syassen, K.; Takemura, K. Crystal structure of the high-pressure phase silicon VI Locality: synthetic Sample: at P = 38.4 GPa Note: phase VI Physical Review Letters, 1999, 82, 1197-1200
9011645	CIF	Si	C m c e	7.9686; 4.7759; 4.7546 90; 90; 90	180.947	Hanfland, M.; Schwarz, U.; Syassen, K.; Takemura, K. Crystal structure of the high-pressure phase silicon VI Locality: synthetic Sample: at P = 42.5 GPa Note: phase VI Physical Review Letters, 1999, 82, 1197-1200
9011646	CIF	Si	C m c e	7.92; 4.7586; 4.7361 90; 90; 90	178.495	Hanfland, M.; Schwarz, U.; Syassen, K.; Takemura, K. Crystal structure of the high-pressure phase silicon VI Locality: synthetic Sample: at P = 45.5 GPa Note: phase VI Physical Review Letters, 1999, 82, 1197-1200
9012724	CIF	Si	F m -3 m	3.34; 3.34; 3.34 90; 90; 90	37.26	Duclos, S. J.; Vohra, Y. K.; Ruoff, A. L. hcp-to-fcc transition in silicon at 78 GPa and studies to 100 GPa Sample: at P = 87 GPa Note: fcc structure stable above 78 GPa Physical Review Letters, 1987, 58, 775-777
9012725	CIF	Cs	P 63/m m c	3.011; 3.011; 4.855 90; 90; 90	44.016	Takemura, K.; Shimomura, O.; Fujihisa, H. Cs(VI): a new high-pressure polymorph of cesium above 72 GPa Sample: at P = 92 GPa Note: stable above P = 72 GPa Note: known as cesium-VI Physical Review Letters, 1991, 66, 2014-2017
9013419	CIF	B	P n n m	5.0576; 5.6245; 6.9884 90; 90; 90	198.795	Zarechnaya, E. Y.; Dubrovinsky, L.; Dubrovinskaia, N.; Filinchuk, Y.; Chernyshov, D.; Dmitriev, V.; Miyajima, N.; El Goresy, A.; Braun, H. F.; Van Smaalen, S.; Kantor, I.; Kantor, A.; Prakapenka, V.; Hanfland, M.; Mikhaylushkin, A. S.; Abrikosov, I. A.; Simak, S. I. Superhard semiconducting optically transparent high pressure phase of boron Note: crystal quenched from 20 GPa, 1700 K Physical Review Letters, 2009, 102, 185501-1185501-4

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