Crystallography Open Database
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Searching journal of publication like 'Chemistry of Materials' volume of publication is 24
COD ID | Links | Formula | Space group | Cell parameters | Cell volume | Bibliography |
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4001669 | CIF | Ag3 In2 Mo15 Se19 | R -3 c :H | 9.9755; 9.9755; 57.2943 90; 90; 120 | 4937.55 | Gougeon, Patrick; Gall, Philippe; Al Rahal Al Orabi, Rabih; Fontaine, Bruno; Gautier, Régis; Potel, Michel; Zhou, Tong; Lenoir, Bertrand; Colin, Malika; Candolfi, Christophe; Dauscher, Anne Synthesis, Crystal and Electronic Structures, and Thermoelectric Properties of the Novel Cluster Compound Ag3In2Mo15Se19 Chemistry of Materials, 2012, 24, 2899 |
4001677 | CIF | Ag3 O4 V | C 1 2/c 1 | 10.1767; 4.9787; 10.2149 90; 115.688; 90 | 466.4 | Cloet, V.; Raw, A.; Poeppelmeier, K. R.; Trimarchi, G.; Peng, H.; Im, J.; Freeman, A.J.; Perry, N. H.; Mason, T. O.; Zakutayev, A.; Ndione, P. F.; Ginley, D. S.; Perkins, J. D. Structural, Optical, and Transport Properties of α- and β-Ag3VO4 Chemistry of Materials, 2012, 24, 3346 |
4001678 | CIF | Ag3 O4 V | I -4 2 m | 4.9795; 4.9795; 9.7271 90; 90; 90 | 241.19 | Cloet, V.; Raw, A.; Poeppelmeier, K. R.; Trimarchi, G.; Peng, H.; Im, J.; Freeman, A.J.; Perry, N. H.; Mason, T. O.; Zakutayev, A.; Ndione, P. F.; Ginley, D. S.; Perkins, J. D. Structural, Optical, and Transport Properties of α- and β-Ag3VO4 Chemistry of Materials, 2012, 24, 3346 |
4001691 | CIF | As27.8 Cs6.36 Zn18.2 | P m -3 n | 10.7731; 10.7731; 10.7731 90; 90; 90 | 1250.32 | He, Hua; Zevalkink, Alex; Gibbs, Zachary M.; Snyder, G. Jeffrey; Bobev, Svilen Synthesis, Structural Characterization, and Physical Properties of the Type-I ClathratesA8Zn18As28(A= K, Rb, Cs) and Cs8Cd18As28 Chemistry of Materials, 2012, 24, 3596 |
4001689 | CIF | As27.8 K7.22 Zn18.2 | P m -3 n | 10.7173; 10.7173; 10.7173 90; 90; 90 | 1230.99 | He, Hua; Zevalkink, Alex; Gibbs, Zachary M.; Snyder, G. Jeffrey; Bobev, Svilen Synthesis, Structural Characterization, and Physical Properties of the Type-I ClathratesA8Zn18As28(A= K, Rb, Cs) and Cs8Cd18As28 Chemistry of Materials, 2012, 24, 3596 |
4001690 | CIF | As27.8 Rb7.17 Zn18.2 | P m -3 n | 10.7413; 10.7413; 10.7413 90; 90; 90 | 1239.28 | He, Hua; Zevalkink, Alex; Gibbs, Zachary M.; Snyder, G. Jeffrey; Bobev, Svilen Synthesis, Structural Characterization, and Physical Properties of the Type-I ClathratesA8Zn18As28(A= K, Rb, Cs) and Cs8Cd18As28 Chemistry of Materials, 2012, 24, 3596 |
4001692 | CIF | As28.06 Cd17.94 Cs7.26 | P m -3 n | 11.3281; 11.3281; 11.3281 90; 90; 90 | 1453.69 | He, Hua; Zevalkink, Alex; Gibbs, Zachary M.; Snyder, G. Jeffrey; Bobev, Svilen Synthesis, Structural Characterization, and Physical Properties of the Type-I ClathratesA8Zn18As28(A= K, Rb, Cs) and Cs8Cd18As28 Chemistry of Materials, 2012, 24, 3596 |
4001684 | CIF | B4 H20 K2 Mg N4 | I 41/a :2 | 9.5974; 9.5974; 13.581 90; 90; 90 | 1250.9 | Chua, Yong Shen; Li, Wen; Wu, Guotao; Xiong, Zhitao; Chen, Ping From Exothermic to Endothermic Dehydrogenation ‒ Interaction of Monoammoniate of Magnesium Amidoborane and Metal Hydrides Chemistry of Materials, 2012, 24, 3574 |
4001685 | CIF | B4 H20 Mg N4 Na2 | I 41/a :2 | 9.4134; 9.4134; 12.7221 90; 90; 90 | 1127.3 | Chua, Yong Shen; Li, Wen; Wu, Guotao; Xiong, Zhitao; Chen, Ping From Exothermic to Endothermic Dehydrogenation ‒ Interaction of Monoammoniate of Magnesium Amidoborane and Metal Hydrides Chemistry of Materials, 2012, 24, 3574 |
4001634 | CIF | Ba3 Ga3 N5 | C 1 2/c 1 | 16.801; 8.3296; 11.623 90; 109.92; 90 | 1529.3 | Hintze, Frauke; Hummel, Franziska; Schmidt, Peter J.; Wiechert, Detlef; Schnick, Wolfgang Ba3Ga3N5—A Novel Host Lattice for Eu2±Doped Luminescent Materials with Unexpected Nitridogallate Substructure Chemistry of Materials, 2012, 24, 402 |
4001710 | CIF | Bi26 Mo10 O69 | P -1 | 11.728; 5.7953; 24.755 89.999; 102.881; 89.95 | 1640.2 | Ling, Chris D.; Miiller, Wojciech; Johnson, Mark R.; Richard, Didier; Rols, Stéphane; Madge, Jim; Evans, Ivana R. Local Structure, Dynamics, and the Mechanisms of Oxide Ionic Conduction in Bi26Mo10O69 Chemistry of Materials, 2012, 24, 4607 |
4001649 | CIF | Bi3.55 Cs Sb0.45 Te6 | C 1 2/m 1 | 51.525; 4.3632; 14.447 90; 101.399; 90 | 3183.8 | Chung, Duck Young; Uher, Ctirad; Kanatzidis, Mercouri G. Sb and Se Substitution in CsBi4Te6: The Semiconductors CsM4Q6(M = Bi, Sb; Q = Te, Se), Cs2Bi10Q15, and CsBi5Q8 Chemistry of Materials, 2012, 24, 1854 |
4001651 | CIF | Bi3.75 Cs0.75 Se3.3 Te2.7 | P n m a | 24.006; 4.291; 14.258 90; 90; 90 | 1468.7 | Chung, Duck Young; Uher, Ctirad; Kanatzidis, Mercouri G. Sb and Se Substitution in CsBi4Te6: The Semiconductors CsM4Q6(M = Bi, Sb; Q = Te, Se), Cs2Bi10Q15, and CsBi5Q8 Chemistry of Materials, 2012, 24, 1854 |
4001648 | CIF | Bi4 Cs Se1.02 Te4.98 | C 1 2/m 1 | 51.207; 4.3452; 14.3095 90; 101.268; 90 | 3122.6 | Chung, Duck Young; Uher, Ctirad; Kanatzidis, Mercouri G. Sb and Se Substitution in CsBi4Te6: The Semiconductors CsM4Q6(M = Bi, Sb; Q = Te, Se), Cs2Bi10Q15, and CsBi5Q8 Chemistry of Materials, 2012, 24, 1854 |
4001650 | CIF | Bi4 Cs0.8 Se0.72 Te5.28 | C 1 2/m 1 | 63.677; 4.3157; 14.387 90; 101.483; 90 | 3874.6 | Chung, Duck Young; Uher, Ctirad; Kanatzidis, Mercouri G. Sb and Se Substitution in CsBi4Te6: The Semiconductors CsM4Q6(M = Bi, Sb; Q = Te, Se), Cs2Bi10Q15, and CsBi5Q8 Chemistry of Materials, 2012, 24, 1854 |
4001693 | CIF | Bi6 Cl Cr O14 Ti2 | P 2 a n | 5.49368; 5.47408; 22.0913 90; 90; 90 | 664.35 | Liu, S.; Miiller, W.; Liu, Y.; Avdeev, M.; Ling, C. D. Sillen‒Aurivillius Intergrowth Phases as Templates for Naturally Layered Multiferroics Chemistry of Materials, 2012, 24, 3932 |
4001694 | CIF | Bi6 Cl Fe O14 Ti2 | P 2 a n | 5.51858; 5.48512; 22.18 90; 90; 90 | 671.39 | Liu, S.; Miiller, W.; Liu, Y.; Avdeev, M.; Ling, C. D. Sillen‒Aurivillius Intergrowth Phases as Templates for Naturally Layered Multiferroics Chemistry of Materials, 2012, 24, 3932 |
4001695 | CIF | Bi6 Cl Mn O14 Ti2 | P 2 a n | 5.515; 5.4939; 22.0436 90; 90; 90 | 667.9 | Liu, S.; Miiller, W.; Liu, Y.; Avdeev, M.; Ling, C. D. Sillen‒Aurivillius Intergrowth Phases as Templates for Naturally Layered Multiferroics Chemistry of Materials, 2012, 24, 3932 |
4001706 | CIF | C10 H22 Cl4 Se2 Sn | C 1 2/c 1 | 9.186; 11.811; 17.1785 90; 102.432; 90 | 1820.1 | de Groot, C. H. (Kees); Gurnani, Chitra; Hector, Andrew L.; Huang, Ruomeng; Jura, Marek; Levason, William; Reid, Gillian Highly Selective Chemical Vapor Deposition of Tin Diselenide Thin Films onto Patterned Substrates via Single Source Diselenoether Precursors Chemistry of Materials, 2012, 24, 4442 |
4001659 | CIF | C13 H14 Zr | P 1 21/c 1 | 12.475; 8.2371; 11.536 90; 113.73; 90 | 1085.2 | Niinistö, Jaakko; Hatanpää, Timo; Kariniemi, Maarit; Mäntymäki, Miia; Costelle, Leila; Mizohata, Kenichiro; Kukli, Kaupo; Ritala, Mikko; Leskelä, Markku Cycloheptatrienyl-Cyclopentadienyl Heteroleptic Precursors for Atomic Layer Deposition of Group 4 Oxide Thin Films Chemistry of Materials, 2012, 24, 2002 |
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