Information card for entry 1502170
| Formula |
C32 H36 N2 S2 Si2 |
| Calculated formula |
C32 H36 N2 S2 Si2 |
| Title of publication |
Aceno[2,1,3]thiadiazoles for field-effect transistors: synthesis and crystal packing. |
| Authors of publication |
Lei, Ting; Zhou, Yan; Cheng, Chu-Yang; Cao, Yue; Peng, Yang; Bian, Jiang; Pei, Jian |
| Journal of publication |
Organic letters |
| Year of publication |
2011 |
| Journal volume |
13 |
| Journal issue |
10 |
| Pages of publication |
2642 - 2645 |
| a |
6.7507 ± 0.0019 Å |
| b |
13.625 ± 0.004 Å |
| c |
33.905 ± 0.01 Å |
| α |
85.906 ± 0.008° |
| β |
89.31 ± 0.009° |
| γ |
83.324 ± 0.008° |
| Cell volume |
3089.5 ± 1.6 Å3 |
| Cell temperature |
113 ± 2 K |
| Ambient diffraction temperature |
113 ± 2 K |
| Number of distinct elements |
5 |
| Space group number |
2 |
| Hermann-Mauguin space group symbol |
P -1 |
| Hall space group symbol |
-P 1 |
| Residual factor for all reflections |
0.1358 |
| Residual factor for significantly intense reflections |
0.1216 |
| Weighted residual factors for significantly intense reflections |
0.3056 |
| Weighted residual factors for all reflections included in the refinement |
0.3146 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.094 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
Yes |
| Has Fobs |
No |
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https://www.crystallography.net/1502170.html