Information card for entry 1505458
| Formula |
C52 H62 Si2 |
| Calculated formula |
C52 H62 Si2 |
| SMILES |
[Si](C#Cc1c2cc(ccc2c(c2cc(ccc12)/C=C/c1ccccc1)C#C[Si](C(C)C)(C(C)C)C(C)C)/C=C/c1ccccc1)(C(C)C)(C(C)C)C(C)C |
| Title of publication |
Soluble and easily crystallized anthracene derivatives: precursors of solution-processable semiconducting molecules. |
| Authors of publication |
Park, Jong-Hwa; Chung, Dae Sung; Park, Jong-Won; Ahn, Taek; Kong, Hoyoul; Jung, Young Kwan; Lee, Jonghee; Yi, Mi Hye; Park, Chan Eon; Kwon, Soon-Ki; Shim, Hong-Ku |
| Journal of publication |
Organic letters |
| Year of publication |
2007 |
| Journal volume |
9 |
| Journal issue |
13 |
| Pages of publication |
2573 - 2576 |
| a |
8.4979 ± 0.0001 Å |
| b |
11.3921 ± 0.0002 Å |
| c |
12.3339 ± 0.0002 Å |
| α |
76.88 ± 0.001° |
| β |
81.092 ± 0.001° |
| γ |
82.806 ± 0.001° |
| Cell volume |
1143.79 ± 0.03 Å3 |
| Cell temperature |
296 ± 2 K |
| Ambient diffraction temperature |
296 ± 2 K |
| Number of distinct elements |
3 |
| Space group number |
2 |
| Hermann-Mauguin space group symbol |
P -1 |
| Hall space group symbol |
-P 1 |
| Residual factor for all reflections |
0.0768 |
| Residual factor for significantly intense reflections |
0.0479 |
| Weighted residual factors for significantly intense reflections |
0.1242 |
| Weighted residual factors for all reflections included in the refinement |
0.1403 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.055 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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https://www.crystallography.net/1505458.html