Information card for entry 1508444

Structure parameters

• Formula: Ga3 Na8 P6 Rb
• Calculated formula: Ga3 Na8 P6 Rb
• SMILES: [Rb+].[Ga]1([P-][Ga]([P-][Ga]([P-]1)[P-2])[P-2])[P-2].[Na+].[Na+].[Na+].[Na+].[Na+].[Na+].[Na+].[Na+]
• Title of publication: Synthesis and Crystal Structures of the Quaternary Zintl Phases RbNa8Ga3Pn6 (Pn = P, As) and Na10NbGaAs6
• Authors of publication: He, Hua; Tyson,Chauntae; Bobev, Svilen
• Journal of publication: Crystals
• Year of publication: 2012
• Journal volume: 2
• Journal issue: 2
• Pages of publication: 213 - 223
• a: 22.276 ± 0.003 Å
• b: 4.6947 ± 0.0006 Å
• c: 16.356 ± 0.002 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 1710.5 ± 0.4 ų
• Cell temperature: 200 ± 2 K
• Ambient diffraction temperature: 200 ± 2 K
• Number of distinct elements: 4
• Space group number: 62
• Hermann-Mauguin space group symbol: P n m a
• Hall space group symbol: -P 2ac 2n
• Residual factor for all reflections: 0.0698
• Residual factor for significantly intense reflections: 0.041
• Weighted residual factors for significantly intense reflections: 0.0625
• Weighted residual factors for all reflections included in the refinement: 0.0707
• Goodness-of-fit parameter for all reflections included in the refinement: 1.104
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No