Information card for entry 1508873

Structure parameters

• Formula: C110 H140 S16 Si12
• Calculated formula: C110 H140 S16 Si12
• SMILES: s1c(C(=C(c2sc(cc2)C(=C(c2sc([Si](C)(C)C)cc2)c2sc([Si](C)(C)C)cc2)c2sc([Si](C)(C)C)cc2)c2sc(C(=C(c3sc([Si](C)(C)C)cc3)c3sc([Si](C)(C)C)cc3)c3sc([Si](C)(C)C)cc3)cc2)c2sc(cc2)C(=C(c2sc([Si](C)(C)C)cc2)c2sc([Si](C)(C)C)cc2)c2sc([Si](C)(C)C)cc2)ccc1C(=C(c1sc([Si](C)(C)C)cc1)c1sc([Si](C)(C)C)cc1)c1sc([Si](C)(C)C)cc1
• Title of publication: Synthesis of Dendrimers Based on Tetrakis(thiophene-2-yl)ethene as New Dendron.
• Authors of publication: Wu, Tianjing; Shi, Jianwu; Li, Chunli; Song, Jinsheng; Xu, Li; Wang, Hua
• Journal of publication: Organic letters
• Year of publication: 2013
• Journal volume: 15
• Journal issue: 2
• Pages of publication: 354 - 357
• a: 12.183 ± 0.007 Å
• b: 16.129 ± 0.009 Å
• c: 16.62 ± 0.01 Å
• α: 100.265 ± 0.01°
• β: 92.579 ± 0.011°
• γ: 90.124 ± 0.011°
• Cell volume: 3210 ± 3 ų
• Cell temperature: 296 ± 2 K
• Ambient diffraction temperature: 296 ± 2 K
• Number of distinct elements: 4
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.1205
• Residual factor for significantly intense reflections: 0.0627
• Weighted residual factors for significantly intense reflections: 0.153
• Weighted residual factors for all reflections included in the refinement: 0.1869
• Goodness-of-fit parameter for all reflections included in the refinement: 1.001
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No