Information card for entry 1518308

Structure parameters

• Formula: C90 H64 F24 N14 P4 Ru2
• Calculated formula: C90 H64 F24 N14 P4 Ru2
• SMILES: [Ru]1234([n]5c(c6[n]1c(cc(c1ccc(N(c7ccccc7)c7ccccc7)cc1)c6)c1[n]2cccc1)cccc5)[n]1ccccc1c1[n]3c(c2[n]4cccc2)c2[n]3[Ru]45([n]6c(c13)cccc6)([n]1c2cccc1)[n]1ccccc1c1[n]4c(cc(c1)c1ccc(N(c2ccccc2)c2ccccc2)cc1)c1[n]5cccc1.[P](F)(F)(F)(F)(F)[F-].[P](F)(F)(F)(F)(F)[F-].[P](F)(F)(F)(F)(F)[F-].[P](F)(F)(F)(F)(F)[F-]
• Title of publication: Tuning of resistive memory switching in electropolymerized metallopolymeric films
• Authors of publication: Cui, Bin-Bin; Mao, Zupan; Chen, Yuxia; Zhong, Yu-Wu; Yu, Gui; Zhan, Chuanlang; Yao, Jiannian
• Journal of publication: Chem. Sci.
• Year of publication: 2015
• Journal volume: 6
• Journal issue: 2
• Pages of publication: 1308
• a: 13.811 ± 0.003 Å
• b: 18.252 ± 0.004 Å
• c: 20.803 ± 0.004 Å
• α: 84.81 ± 0.03°
• β: 82.76 ± 0.03°
• γ: 72.33 ± 0.03°
• Cell volume: 4949 ± 2 ų
• Cell temperature: 173.15 K
• Ambient diffraction temperature: 173.15 K
• Number of distinct elements: 6
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.1588
• Residual factor for significantly intense reflections: 0.1354
• Weighted residual factors for significantly intense reflections: 0.3591
• Weighted residual factors for all reflections included in the refinement: 0.3829
• Goodness-of-fit parameter for all reflections included in the refinement: 1.168
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No