Information card for entry 1542868

Structure parameters

• Formula: C26 H78 Ge2 Si10
• Calculated formula: C26 H78 Ge2 Si10
• SMILES: [Ge]([Si](C)(C)C)([Si](C)(C)C)([Si](C)(C)C)[Si]([Si]([Si]([Si]([Ge]([Si](C)(C)C)([Si](C)(C)C)[Si](C)(C)C)(C)C)(C)C)(C)C)(C)C
• Title of publication: σ-Bond electron delocalization of branched oligogermanes and germanium containing oligosilanes
• Authors of publication: Hlina, Johann; Zitz, Rainer; Wagner, Harald; Stella, Filippo; Baumgartner, Judith; Marschner, Christoph
• Journal of publication: Inorganica Chimica Acta
• Year of publication: 2014
• Journal volume: 422
• Pages of publication: 120 - 133
• a: 8.9902 ± 0.0018 Å
• b: 9.1616 ± 0.0018 Å
• c: 16.368 ± 0.003 Å
• α: 82.1 ± 0.03°
• β: 75.6 ± 0.03°
• γ: 66.72 ± 0.03°
• Cell volume: 1198.3 ± 0.5 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 4
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0323
• Residual factor for significantly intense reflections: 0.0299
• Weighted residual factors for significantly intense reflections: 0.0709
• Weighted residual factors for all reflections included in the refinement: 0.072
• Goodness-of-fit parameter for all reflections included in the refinement: 1.036
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No