Information card for entry 1569593

Structure parameters

• Formula: C24 H72 Ge4 Si10
• Calculated formula: C24 H72 Ge4 Si10
• SMILES: C[Si]([Ge]12[Si](C)(C)[Ge]3([Si](C)(C)[Ge]([Si]2(C)C)([Si](C)(C)[Ge]([Si]1(C)C)([Si]3(C)C)[Si](C)(C)C)[Si](C)(C)C)[Si](C)(C)C)(C)C
• Title of publication: Selective synthesis of germasila-adamantanes through germanium-silicon shift processes.
• Authors of publication: Kühn, Steffen; Köstler, Benedikt; True, Celine; Albers, Lena; Wagner, Matthias; Müller, Thomas; Marschner, Christoph
• Journal of publication: Chemical science
• Year of publication: 2023
• Journal volume: 14
• Journal issue: 33
• Pages of publication: 8956 - 8961
• a: 17.67 ± 0.0018 Å
• b: 17.67 ± 0.0018 Å
• c: 29.511 ± 0.006 Å
• α: 90°
• β: 90°
• γ: 120°
• Cell volume: 7980 ± 2 ų
• Cell temperature: 150 K
• Ambient diffraction temperature: 150 K
• Number of distinct elements: 4
• Space group number: 148
• Hermann-Mauguin space group symbol: R -3 :H
• Hall space group symbol: -R 3
• Residual factor for all reflections: 0.0544
• Residual factor for significantly intense reflections: 0.0533
• Weighted residual factors for significantly intense reflections: 0.1098
• Weighted residual factors for all reflections included in the refinement: 0.1105
• Goodness-of-fit parameter for all reflections included in the refinement: 0.9974
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No