Information card for entry 2004051

Structure parameters

• Formula: Ga Li O6 Si2
• Calculated formula: Ga Li O6 Si2
• Title of publication: Low-Temperature Form of LiGaSi~2~O~6~
• Authors of publication: Sato, Akira; Osawa, Toshikazu; Ohashi, Haruo
• Journal of publication: Acta Crystallographica, Section C: Crystal Structure Communications
• Year of publication: 1995
• Journal volume: 51
• Journal issue: 10
• Pages of publication: 1959 - 1960
• a: 9.5394 ± 0.0004 Å
• b: 8.5756 ± 0.0002 Å
• c: 5.2508 ± 0.0003 Å
• α: 90°
• β: 110.124 ± 0.002°
• γ: 90°
• Cell volume: 403.32 ± 0.03 ų
• Cell temperature: 273 K
• Number of distinct elements: 4
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/c 1
• Hall space group symbol: -P 2ybc
• Residual factor for significantly intense reflections: 0.041
• Weighted residual factors for significantly intense reflections: 0.043
• Goodness-of-fit parameter for significantly intense reflections: 1.4
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No