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Information card for entry 2005913
Preview
| Coordinates | 2005913.cif |
|---|---|
| Original IUCr paper | HTML |
| Chemical name | Bis(tetraethylammonium) bis(μ-sulfido)-bis[(1,2,3,4-tetrathiabutan-1,4-diyl-S,S)thiotungstate(V)] |
|---|---|
| Formula | C16 H40 N2 S12 W2 |
| Calculated formula | C16 H30 N2 S12 W2 |
| Title of publication | Disorder in Bis(tetraethylammonium) Bis(μ-sulfido)bis[(1,2,3,4-tetrathiabutane-1,4-diyl-<i>S</i>,<i>S</i>)thiotungstate(V)] |
| Authors of publication | Mukherjee, A. K.; Das, P. K.; Mukherjee, M.; Chakraborty, P. K.; Bhattacharya, R. |
| Journal of publication | Acta Crystallographica Section C |
| Year of publication | 1997 |
| Journal volume | 53 |
| Journal issue | 2 |
| Pages of publication | 209 - 212 |
| a | 21.174 ± 0.004 Å |
| b | 21.174 ± 0.004 Å |
| c | 15.119 ± 0.002 Å |
| α | 90° |
| β | 90° |
| γ | 90° |
| Cell volume | 6778 ± 2 Å3 |
| Cell temperature | 293 ± 2 K |
| Ambient diffraction temperature | 293 ± 2 K |
| Number of distinct elements | 5 |
| Space group number | 120 |
| Hermann-Mauguin space group symbol | I -4 c 2 |
| Hall space group symbol | I -4 -2c |
| Residual factor for all reflections | 0.0676 |
| Residual factor for significantly intense reflections | 0.0484 |
| Weighted residual factors for all reflections | 0.1244 |
| Weighted residual factors for significantly intense reflections | 0.1139 |
| Goodness-of-fit parameter for all reflections | 1.044 |
| Goodness-of-fit parameter for significantly intense reflections | 1.09 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | Yes |
| Has Fobs | No |
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