Information card for entry 2006506
| Chemical name |
1,2,4,5-Tetrakis(trimethylsilylmethyl)benzene |
| Formula |
C22 H46 Si4 |
| Calculated formula |
C22 H46 Si4 |
| SMILES |
c1c(C[Si](C)(C)C)c(cc(C[Si](C)(C)C)c1C[Si](C)(C)C)C[Si](C)(C)C |
| Title of publication |
1,2,4,5-Tetrakis(trimethylsilylmethyl)benzene at 150K |
| Authors of publication |
Nagel, Norbert; Ansari, Manssur; Bock, Hans |
| Journal of publication |
Acta Crystallographica Section C |
| Year of publication |
1997 |
| Journal volume |
53 |
| Journal issue |
9 |
| Pages of publication |
1329 - 1331 |
| a |
16.2226 ± 0.0013 Å |
| b |
17.8756 ± 0.0015 Å |
| c |
19.0452 ± 0.0018 Å |
| α |
90° |
| β |
90° |
| γ |
90° |
| Cell volume |
5522.9 ± 0.8 Å3 |
| Cell temperature |
150 ± 2 K |
| Ambient diffraction temperature |
150 ± 2 K |
| Number of distinct elements |
3 |
| Space group number |
70 |
| Hermann-Mauguin space group symbol |
F d d d :2 |
| Hall space group symbol |
-F 2uv 2vw |
| Residual factor for all reflections |
0.0472 |
| Residual factor for significantly intense reflections |
0.0356 |
| Weighted residual factors for all reflections |
0.0927 |
| Weighted residual factors for significantly intense reflections |
0.0862 |
| Goodness-of-fit parameter for all reflections |
1.089 |
| Goodness-of-fit parameter for significantly intense reflections |
1.119 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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https://www.crystallography.net/2006506.html