Information card for entry 2008331

Structure parameters

• Chemical name: (C4 H12 N)4 Ge9 H12 O26 14(H2 O)
• Formula: C16 H88 Ge9 N4 O40
• Calculated formula: C16 H88 Ge9 N4 O40
• SMILES: C[N+](C)(C)C.C[N+](C)(C)C.O[Ge]12O[Ge]345(O[Ge](O[Ge](O[Ge](O1)(O)O)(O)(O)O3)(O)O2)O[Ge]1(O)O[Ge](O)(O)O[Ge](O)(O)(O[Ge](O)(O4)O1)O5.O.O.O.O.O.O.O.C[N+](C)(C)C.C[N+](C)(C)C.O.O.O.O.O.O.O
• Title of publication: [N(CH~3~)~4~]~4~H~12~Ge~9~O~26~^.^14H~2~O
• Authors of publication: Tripathi, Akhilesh; Young Jr., Victor G.; Johnson, Geoffrey M.; Cahill, Christopher L.; Parise, John B.
• Journal of publication: Acta Crystallographica Section C
• Year of publication: 1999
• Journal volume: 55
• Journal issue: 4
• Pages of publication: 496 - 499
• a: 13.8627 ± 0.0003 Å
• b: 12.6533 ± 0.0003 Å
• c: 16.6278 ± 0.0004 Å
• α: 90°
• β: 111.697 ± 0.001°
• γ: 90°
• Cell volume: 2710.02 ± 0.11 ų
• Cell temperature: 173 ± 2 K
• Ambient diffraction temperature: 173 ± 2 K
• Number of distinct elements: 5
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.0766
• Residual factor for significantly intense reflections: 0.0483
• Weighted residual factors for all reflections: 0.1096
• Weighted residual factors for all reflections included in the refinement: 0.0998
• Goodness-of-fit parameter for significantly intense reflections: 1.149
• Goodness-of-fit parameter for all reflections included in the refinement: 1.08
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No