Information card for entry 2010856

Structure parameters

• Formula: C32 H56 O6 S2 Si
• Calculated formula: C32 H56 O6 S2 Si
• SMILES: S1CCCSC1(C[C@H]1O[C@H](CC(OC)(OC)C1)COCc1ccccc1)C(C)(C)[C@@H](O[Si](C)(C)C(C)(C)C)CCO
• Title of publication: ({-})-(3<i>S</i>)-4-(2-{[4,4-Dimethoxy-6-(benzyloxymethyl)perhydropyran-2-yl]methyl}-1,3-dithian-2-yl)-4-methyl-3-(1,1,2,2-tetramethyl-1-silapropoxy)pentan-1-ol
• Authors of publication: Hosomi, Hiroyuki; Ohba, Shigeru; Ohmori, Ken; Obitsu, Tetsuo; Ogawa, Yasuyuki; Ishikawa, Yuichi; Yamamura, Shosuke; Nishiyama, Shigeru
• Journal of publication: Acta Crystallographica Section C
• Year of publication: 2000
• Journal volume: 56
• Journal issue: 4
• Pages of publication: e140 - e141
• a: 6.878 ± 0.003 Å
• b: 19.658 ± 0.003 Å
• c: 26.493 ± 0.002 Å
• α: 90°
• β: 91.33 ± 0.02°
• γ: 90°
• Cell volume: 3581.1 ± 1.7 ų
• Cell temperature: 298 ± 1 K
• Number of distinct elements: 5
• Space group number: 4
• Hermann-Mauguin space group symbol: P 1 21 1
• Hall space group symbol: P 2yb
• Residual factor for significantly intense reflections: 0.051
• Weighted residual factors for all reflections included in the refinement: 0.13
• Goodness-of-fit parameter for all reflections included in the refinement: 1.02
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: Yes