Information card for entry 2104157

Structure parameters

• Common name: Octakis(trivinylsilyl)octasilicate
• Formula: C48 H72 O20 Si16
• Calculated formula: C48 H72 O20 Si16
• SMILES: C(=C)[Si](C=C)(C=C)O[Si]12O[Si]3(O[Si]4(O[Si](O1)(O[Si]1(O[Si](O2)(O[Si](C=C)(C=C)C=C)O[Si](O[Si](O1)(O4)O[Si](C=C)(C=C)C=C)(O3)O[Si](C=C)(C=C)C=C)O[Si](C=C)(C=C)C=C)O[Si](C=C)(C=C)C=C)O[Si](C=C)(C=C)C=C)O[Si](C=C)(C=C)C=C
• Title of publication: Disorder and pseudo-symmetry in octakis(trivinylsilyl)octasilicate
• Authors of publication: Slebodnick, Carla; Angel, Ross J.; Hanson, Brian E.; Agaskar, Pradyot A.; Soler, Tatiana; Falvello, Larry R.
• Journal of publication: Acta Crystallographica Section B
• Year of publication: 2008
• Journal volume: 64
• Journal issue: 3
• Pages of publication: 330 - 337
• a: 21.1698 ± 0.0018 Å
• b: 21.1698 ± 0.0018 Å
• c: 16.059 ± 0.003 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 7197 ± 1.6 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 4
• Space group number: 80
• Hermann-Mauguin space group symbol: I 41
• Hall space group symbol: I 4bw
• Residual factor for all reflections: 0.1067
• Residual factor for significantly intense reflections: 0.0597
• Weighted residual factors for significantly intense reflections: 0.1168
• Weighted residual factors for all reflections included in the refinement: 0.1367
• Goodness-of-fit parameter for all reflections included in the refinement: 0.963
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No