Information card for entry 2203795

Structure parameters

• Formula: C36 H84 O18 Si6 Sn6
• Calculated formula: C36 H84 O18 Si6 Sn6
• SMILES: C1(=[O][Sn]234(C[Si](C)(C)C)[O]5[Sn]67([O]2[Sn]25([O]3[Sn]35([O]2[Sn]28(C[Si](C)(C)C)([O]3[Sn]3([O]=C(C)O6)([O]72)(OC(=[O]8)C)C[Si](C)(C)C)[O]=C(C)O5)(OC(C)=[O]3)C[Si](C)(C)C)([O]=C(C)O4)C[Si](C)(C)C)(O1)C[Si](C)(C)C)C
• Title of publication: Hexameric trimethylsilylmethyloxotin acetate, [(Me~3~SiCH~2~)Sn(O)(OAc)]~6~
• Authors of publication: Beckmann, Jens; Dakternieks, Dainis; Duthie, Andrew; Thompson, Laura; Tiekink, Edward R. T.
• Journal of publication: Acta Crystallographica Section E
• Year of publication: 2004
• Journal volume: 60
• Journal issue: 6
• Pages of publication: m767 - m768
• a: 13.8888 ± 0.0007 Å
• b: 18.8359 ± 0.0009 Å
• c: 13.9301 ± 0.0007 Å
• α: 90°
• β: 116.545 ± 0.001°
• γ: 90°
• Cell volume: 3260.1 ± 0.3 ų
• Cell temperature: 223 ± 2 K
• Ambient diffraction temperature: 223 ± 2 K
• Number of distinct elements: 5
• Space group number: 14
• Hermann-Mauguin space group symbol: P 1 21/n 1
• Hall space group symbol: -P 2yn
• Residual factor for all reflections: 0.064
• Residual factor for significantly intense reflections: 0.044
• Weighted residual factors for significantly intense reflections: 0.086
• Weighted residual factors for all reflections included in the refinement: 0.093
• Goodness-of-fit parameter for all reflections included in the refinement: 1.02
• Diffraction radiation wavelength: 0.71069 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: Yes