Information card for entry 2209600
| Chemical name |
1,1-Bis(tert-butylamido)-3,3,5,5-tetraphenylcyclotrisiloxane |
| Formula |
C32 H40 N2 O3 Si3 |
| Calculated formula |
C32 H40 N2 O3 Si3 |
| SMILES |
[Si]1(O[Si](O[Si](O1)(NC(C)(C)C)NC(C)(C)C)(c1ccccc1)c1ccccc1)(c1ccccc1)c1ccccc1 |
| Title of publication |
1,1-Bis(<i>tert</i>-butylamido)-3,3,5,5-tetraphenylcyclotrisiloxane |
| Authors of publication |
Copsey, May C.; Balakrishna, Maravanji S.; Chivers, Tristram |
| Journal of publication |
Acta Crystallographica Section E |
| Year of publication |
2006 |
| Journal volume |
62 |
| Journal issue |
7 |
| Pages of publication |
o2813 - o2814 |
| a |
10.246 ± 0.002 Å |
| b |
15.759 ± 0.003 Å |
| c |
20.087 ± 0.004 Å |
| α |
90° |
| β |
92.94 ± 0.03° |
| γ |
90° |
| Cell volume |
3239.1 ± 1.1 Å3 |
| Cell temperature |
173 ± 2 K |
| Ambient diffraction temperature |
173 ± 2 K |
| Number of distinct elements |
5 |
| Space group number |
14 |
| Hermann-Mauguin space group symbol |
P 1 21/n 1 |
| Hall space group symbol |
-P 2yn |
| Residual factor for all reflections |
0.073 |
| Residual factor for significantly intense reflections |
0.0455 |
| Weighted residual factors for significantly intense reflections |
0.1032 |
| Weighted residual factors for all reflections included in the refinement |
0.1174 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.025 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
Yes |
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