Information card for entry 2214495
| Common name |
1,1,1-Tris(benzenesulfonyloxymethyl)ethane |
| Chemical name |
1,1,1-Tris(phenylsulfonyloxymethyl)ethane |
| Formula |
C23 H24 O9 S3 |
| Calculated formula |
C23 H24 O9 S3 |
| SMILES |
CC(COS(=O)(=O)c1ccccc1)(COS(=O)(=O)c1ccccc1)COS(=O)(=O)c1ccccc1 |
| Title of publication |
1,1,1-Tris(phenylsulfonyloxymethyl)ethane |
| Authors of publication |
Fujihara, Takashi; Shioji, Eri; Nagasawa, Akira |
| Journal of publication |
Acta Crystallographica Section E |
| Year of publication |
2007 |
| Journal volume |
63 |
| Journal issue |
8 |
| Pages of publication |
o3628 - o3628 |
| a |
5.8962 ± 0.0005 Å |
| b |
14.665 ± 0.0014 Å |
| c |
15.1812 ± 0.0014 Å |
| α |
69.164 ± 0.002° |
| β |
85.096 ± 0.003° |
| γ |
87.685 ± 0.002° |
| Cell volume |
1222.28 ± 0.19 Å3 |
| Cell temperature |
173 ± 2 K |
| Ambient diffraction temperature |
173 ± 2 K |
| Number of distinct elements |
4 |
| Space group number |
2 |
| Hermann-Mauguin space group symbol |
P -1 |
| Hall space group symbol |
-P 1 |
| Residual factor for all reflections |
0.0646 |
| Residual factor for significantly intense reflections |
0.0517 |
| Weighted residual factors for significantly intense reflections |
0.1179 |
| Weighted residual factors for all reflections included in the refinement |
0.1263 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.026 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
Yes |
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