Information card for entry 2216183

Structure parameters

• Chemical name: octachlorido-1κ^4^Cl,3κ^4^Cl-di-μ~2~-nitrido-1:2κ^2^N:N;2:3κ^2^N:N-\ tetrapyridine-1κN,2κ^2^N,3κN-bis(trimethylsilylimido-2κN)tritungsten(V) dichloromethane disolvate
• Formula: C28 H42 Cl12 N8 Si2 W3
• Calculated formula: C28 H42 Cl12 N8 Si2 W3
• SMILES: C[Si](C)(C)N=[W](N=[W]([n]1ccccc1)(Cl)(Cl)(Cl)Cl)([n]1ccccc1)(=N[Si](C)(C)C)(N=[W](Cl)(Cl)(Cl)Cl)[n]1ccccc1.ClCCl.c1ncccc1.C(Cl)Cl
• Title of publication: An N-bridged tritungsten compound for the chemical vapor deposition of WN~<i>x~</i> thin films
• Authors of publication: Koller, Jürgen; McElwee-White, Lisa; Abboud, Khalil A.
• Journal of publication: Acta Crystallographica Section E
• Year of publication: 2007
• Journal volume: 63
• Journal issue: 11
• Pages of publication: m2733 - m2733
• a: 10.0546 ± 0.0008 Å
• b: 19.5493 ± 0.0015 Å
• c: 25.359 ± 0.002 Å
• α: 90°
• β: 94.329 ± 0.002°
• γ: 90°
• Cell volume: 4970.4 ± 0.7 ų
• Cell temperature: 173 ± 2 K
• Ambient diffraction temperature: 173 ± 2 K
• Number of distinct elements: 6
• Space group number: 15
• Hermann-Mauguin space group symbol: C 1 2/c 1
• Hall space group symbol: -C 2yc
• Residual factor for all reflections: 0.0541
• Residual factor for significantly intense reflections: 0.0293
• Weighted residual factors for significantly intense reflections: 0.0506
• Weighted residual factors for all reflections included in the refinement: 0.0535
• Goodness-of-fit parameter for all reflections included in the refinement: 0.758
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: Yes