Information card for entry 2223216
| Chemical name |
2,2,6,6-Tetrakis(biphenyl-2-yl)-4,4,8,8-tetramethylcyclotetrasiloxane |
| Formula |
C52 H48 O4 Si4 |
| Calculated formula |
C52 H48 O4 Si4 |
| SMILES |
C[Si]1(C)O[Si](O[Si](C)(C)O[Si](O1)(c1ccccc1c1ccccc1)c1ccccc1c1ccccc1)(c1ccccc1c1ccccc1)c1ccccc1c1ccccc1 |
| Title of publication |
2,2,6,6-Tetrakis(biphenyl-2-yl)-4,4,8,8-tetramethylcyclotetrasiloxane |
| Authors of publication |
Couzijn, Erik P. A.; Lutz, Martin; Spek, Anthony L.; Lammertsma, Koop |
| Journal of publication |
Acta Crystallographica Section E |
| Year of publication |
2009 |
| Journal volume |
65 |
| Journal issue |
9 |
| Pages of publication |
o2182 - o2183 |
| a |
17.3418 ± 0.0002 Å |
| b |
14.6488 ± 0.0002 Å |
| c |
17.9584 ± 0.0002 Å |
| α |
90° |
| β |
90° |
| γ |
90° |
| Cell volume |
4562.09 ± 0.1 Å3 |
| Cell temperature |
110 ± 2 K |
| Ambient diffraction temperature |
110 ± 2 K |
| Number of distinct elements |
4 |
| Space group number |
61 |
| Hermann-Mauguin space group symbol |
P b c a |
| Hall space group symbol |
-P 2ac 2ab |
| Residual factor for all reflections |
0.0579 |
| Residual factor for significantly intense reflections |
0.0356 |
| Weighted residual factors for significantly intense reflections |
0.0868 |
| Weighted residual factors for all reflections included in the refinement |
0.0966 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.067 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
Yes |
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https://www.crystallography.net/2223216.html