Information card for entry 2232953
| Chemical name |
<i>N</i>,<i>N</i>'-Bis(3-methylbut-2-enyl)-<i>N</i>,<i>N</i>'-(1,4- phenylene)dibenzenesulfonamide |
| Formula |
C28 H32 N2 O4 S2 |
| Calculated formula |
C28 H32 N2 O4 S2 |
| SMILES |
CC(=CCN(S(=O)(=O)c1ccccc1)c1ccc(cc1)N(S(=O)(=O)c1ccccc1)CC=C(C)C)C |
| Title of publication |
<i>N</i>,<i>N</i>'-Bis(3-methylbut-2-enyl)-<i>N</i>,<i>N</i>'-(1,4-phenylene)dibenzenesulfonamide |
| Authors of publication |
Ejaz; Khan, Islam Ullah; Sheikh, Tahir Ali; Harrison, William T. A. |
| Journal of publication |
Acta Crystallographica Section E |
| Year of publication |
2011 |
| Journal volume |
67 |
| Journal issue |
12 |
| Pages of publication |
o3281 |
| a |
10.6574 ± 0.0004 Å |
| b |
20.8073 ± 0.0008 Å |
| c |
6.4015 ± 0.0002 Å |
| α |
90° |
| β |
105.673 ± 0.002° |
| γ |
90° |
| Cell volume |
1366.76 ± 0.09 Å3 |
| Cell temperature |
296 ± 2 K |
| Ambient diffraction temperature |
296 ± 2 K |
| Number of distinct elements |
5 |
| Space group number |
14 |
| Hermann-Mauguin space group symbol |
P 1 21/c 1 |
| Hall space group symbol |
-P 2ybc |
| Residual factor for all reflections |
0.0612 |
| Residual factor for significantly intense reflections |
0.0391 |
| Weighted residual factors for significantly intense reflections |
0.0935 |
| Weighted residual factors for all reflections included in the refinement |
0.1044 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.026 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
Yes |
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https://www.crystallography.net/2232953.html