Information card for entry 2234396
| Chemical name |
6,6-Dimethyl-2<i>H</i>,5<i>H</i>,6<i>H</i>,7<i>H</i>-1,3- dithiolo[4,5-<i>f</i>][1,5,3]dithiasilepin-2-one |
| Formula |
C7 H10 O S4 Si |
| Calculated formula |
C7 H10 O S4 Si |
| SMILES |
C1(=O)SC2=C(S1)SC[Si](CS2)(C)C |
| Title of publication |
6,6-Dimethyl-2<i>H</i>,5<i>H</i>,6<i>H</i>,7<i>H</i>-1,3-dithiolo[4,5-<i>f</i>][1,5,3]dithiasilepin-2-one |
| Authors of publication |
Li, Hongqi; Zhang, Xuebin; Zhang, Zhongbao; Chen, Zhen; Peng, Jiajian |
| Journal of publication |
Acta Crystallographica Section E |
| Year of publication |
2012 |
| Journal volume |
68 |
| Journal issue |
4 |
| Pages of publication |
o1122 |
| a |
6.148 ± 0.007 Å |
| b |
8.569 ± 0.01 Å |
| c |
11.846 ± 0.014 Å |
| α |
69.292 ± 0.012° |
| β |
85.821 ± 0.013° |
| γ |
83.129 ± 0.013° |
| Cell volume |
579.2 ± 1.2 Å3 |
| Cell temperature |
296 ± 2 K |
| Ambient diffraction temperature |
296 ± 2 K |
| Number of distinct elements |
5 |
| Space group number |
2 |
| Hermann-Mauguin space group symbol |
P -1 |
| Hall space group symbol |
-P 1 |
| Residual factor for all reflections |
0.042 |
| Residual factor for significantly intense reflections |
0.0306 |
| Weighted residual factors for significantly intense reflections |
0.0671 |
| Weighted residual factors for all reflections included in the refinement |
0.0719 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.005 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
Yes |
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The link is:
https://www.crystallography.net/2234396.html