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Information card for entry 4000018
Preview
| Coordinates | 4000018.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | C24 H16 Co N4 Rb S12 Se8 |
|---|---|
| Calculated formula | C22 H16 Co0.25 N4 Rb0.25 S12 Se8 |
| SMILES | C1CSC2=C(S1)[Se]C(=C1[Se]C3=C([Se]1)SCCS3)[Se]2.C1CSC2=C(S1)[Se]C(=C1[Se]C3=C([Se]1)SCCS3)[Se]2.S=C=N[Co](N=C=S)(N=C=S)N=C=S.[Rb+] |
| Title of publication | Control of Electronic State by Dihedral Angle in θ-type Bis(ethylenedithio)tetraselenafulvalene Salts |
| Authors of publication | Mori, Hatsumi; Sakurai, Naoki; Tanaka, Shoji; Moriyama, Hiroshi; Mori, Takehiko; Kobayashi, Hayao; Kobayashi, Akiko |
| Journal of publication | Chemistry of Materials |
| Year of publication | 2000 |
| Journal volume | 12 |
| Journal issue | 10 |
| Pages of publication | 2984 - 2987 |
| a | 10.128 ± 0.009 Å |
| b | 43.97 ± 0.01 Å |
| c | 4.71 ± 0.01 Å |
| α | 90° |
| β | 90° |
| γ | 90° |
| Cell volume | 2098 ± 4 Å3 |
| Cell temperature | 298.2 K |
| Ambient diffraction temperature | 298.2 K |
| Number of distinct elements | 7 |
| Space group number | 23 |
| Hermann-Mauguin space group symbol | I 2 2 2 |
| Hall space group symbol | I 2 2 |
| Residual factor for significantly intense reflections | 0.0799 |
| Weighted residual factors for significantly intense reflections | 0.0476 |
| Goodness-of-fit parameter for significantly intense reflections | 3.412 |
| Diffraction radiation wavelength | 0.7107 Å |
| Diffraction radiation type | MoKa |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
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