Information card for entry 4000755

Structure parameters

• Formula: C23 H56 O4 Sn4 Zn4
• Calculated formula: C23 H56 O4 Sn4 Zn4
• SMILES: [Sn]([O]12[Zn]3([O]4([Sn](C)(C)C)[Zn]5([O]3([Sn](C)(C)C)[Zn]1([O]5([Sn](C)(C)C)[Zn]24C)C)C)C)(C)(C)C.c1(ccccc1)C
• Title of publication: Synthesis of Stannyl-Substituted Zn4O4Cubanes as Single-Source Precursors for Amorphous Tin-Doped ZnO and Zn2SnO4Nanocrystals and Their Potential for Thin Film Field Effect Transistor Applications
• Authors of publication: Tsaroucha, Marianna; Aksu, Yilmaz; Irran, Elisabeth; Driess, Matthias
• Journal of publication: Chemistry of Materials
• Year of publication: 2011
• Journal volume: 23
• Journal issue: 9
• Pages of publication: 2428
• a: 11.2398 ± 0.0002 Å
• b: 11.0673 ± 0.0002 Å
• c: 16.6253 ± 0.0004 Å
• α: 90°
• β: 98.927 ± 0.002°
• γ: 90°
• Cell volume: 2043.04 ± 0.07 ų
• Cell temperature: 150 ± 2 K
• Ambient diffraction temperature: 150 ± 2 K
• Number of distinct elements: 5
• Space group number: 4
• Hermann-Mauguin space group symbol: P 1 21 1
• Hall space group symbol: P 2yb
• Residual factor for all reflections: 0.0231
• Residual factor for significantly intense reflections: 0.0205
• Weighted residual factors for significantly intense reflections: 0.0401
• Weighted residual factors for all reflections included in the refinement: 0.0405
• Goodness-of-fit parameter for all reflections included in the refinement: 1.01
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No