Information card for entry 4000888

Structure parameters

• Formula: C28 H56 Co N6 O2 S2
• Calculated formula: C28 H56 Co N6 O2 S2
• SMILES: CC(N(C1=NC(=[S][Co]2(O1)[S]=C(N=C(O2)N(C(C)C)C(C)C)N(C(C)C)C(C)C)N(C(C)C)C(C)C)C(C)C)C
• Title of publication: Selective Deposition of Cobalt Sulfide Nanostructured Thin Films from Single-Source Precursors
• Authors of publication: Ramasamy, Karthik; Malik, Mohammad A.; Raftery, James; Tuna, Floriana; O’Brien, Paul
• Journal of publication: Chemistry of Materials
• Year of publication: 2010
• Journal volume: 22
• Journal issue: 17
• Pages of publication: 4919
• a: 14.435 ± 0.005 Å
• b: 18.35 ± 0.006 Å
• c: 25.972 ± 0.008 Å
• α: 90°
• β: 91.433 ± 0.006°
• γ: 90°
• Cell volume: 6877 ± 4 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 6
• Space group number: 15
• Hermann-Mauguin space group symbol: C 1 2/c 1
• Hall space group symbol: -C 2yc
• Residual factor for all reflections: 0.1424
• Residual factor for significantly intense reflections: 0.1052
• Weighted residual factors for significantly intense reflections: 0.2104
• Weighted residual factors for all reflections included in the refinement: 0.2261
• Goodness-of-fit parameter for all reflections included in the refinement: 1.206
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No