Information card for entry 4001018
| Formula |
C30 H16 S6 |
| Calculated formula |
C30 H16 S6 |
| SMILES |
c1ccc(cc1)c1sc2c(c1)c1c(s2)sc(c1)/C=C/c1sc2c(c1)c1c(s2)sc(c1)c1ccccc1 |
| Title of publication |
High-Performance, Stable Organic Field-Effect Transistors Based ontrans-1,2-(Dithieno[2,3-b:3′,2′-d]thiophene)ethene |
| Authors of publication |
Zhang, Lei; Tan, Lin; Wang, Zhaohui; Hu, Wenping; Zhu, Daoben |
| Journal of publication |
Chemistry of Materials |
| Year of publication |
2009 |
| Journal volume |
21 |
| Journal issue |
9 |
| Pages of publication |
1993 |
| a |
26.259 ± 0.005 Å |
| b |
7.36 ± 0.0015 Å |
| c |
6.1739 ± 0.0012 Å |
| α |
90° |
| β |
94.51 ± 0.03° |
| γ |
90° |
| Cell volume |
1189.5 ± 0.4 Å3 |
| Cell temperature |
113 ± 2 K |
| Ambient diffraction temperature |
293 ± 2 K |
| Number of distinct elements |
3 |
| Space group number |
14 |
| Hermann-Mauguin space group symbol |
P 1 21/c 1 |
| Hall space group symbol |
-P 2ybc |
| Residual factor for all reflections |
0.0822 |
| Residual factor for significantly intense reflections |
0.0646 |
| Weighted residual factors for significantly intense reflections |
0.1422 |
| Weighted residual factors for all reflections included in the refinement |
0.1493 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.019 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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