Information card for entry 4001286

Structure parameters

• Formula: Ce Rh Sb
• Calculated formula: Ce Rh Sb
• Title of publication: Inducing Magnetism in the Kondo Semiconductor CeRhSb through Hydrogenation: Antiferromagnetic Behavior of the New Hydride CeRhSbH0.2
• Authors of publication: Chevalier, B.; Decourt, R.; Heying, B.; Schappacher, F. M.; Rodewald, U. Ch.; Hoffmann, R.-D.; Pöttgen, R.; Eger, R.; Simon, A.
• Journal of publication: Chemistry of Materials
• Year of publication: 2007
• Journal volume: 19
• Journal issue: 1
• Pages of publication: 28
• a: 7.4158 ± 0.0009 Å
• b: 4.618 ± 0.0009 Å
• c: 7.8577 ± 0.0008 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 269.1 ± 0.07 ų
• Cell temperature: 293 ± 2 K
• Ambient diffraction temperature: 293 ± 2 K
• Number of distinct elements: 3
• Space group number: 62
• Hermann-Mauguin space group symbol: P n m a
• Hall space group symbol: -P 2ac 2n
• Residual factor for all reflections: 0.0661
• Residual factor for significantly intense reflections: 0.0434
• Weighted residual factors for significantly intense reflections: 0.0873
• Weighted residual factors for all reflections included in the refinement: 0.096
• Goodness-of-fit parameter for all reflections included in the refinement: 1.193
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No