Information card for entry 4001360
| Chemical name |
3,2':5',2'':5'',2''':5''',2'''':5'''',3'''''-sexithiophene |
| Formula |
C24 H14 S6 |
| Calculated formula |
C24 H14 S6 |
| SMILES |
c1scc(c1)c1ccc(s1)c1ccc(s1)c1ccc(s1)c1ccc(s1)c1cscc1 |
| Title of publication |
Structure and Electrical Properties of Unsubstituted Oligothiophenes End-Capped at the β-Position |
| Authors of publication |
Chisaka, Jiro; Lu, Ming; Nagamatsu, Shuichi; Chikamatsu, Masayuki; Yoshida, Yuji; Goto, Midori; Azumi, Reiko; Yamashita, Masafumi; Yase, Kiyoshi |
| Journal of publication |
Chemistry of Materials |
| Year of publication |
2007 |
| Journal volume |
19 |
| Journal issue |
10 |
| Pages of publication |
2694 |
| a |
22.447 ± 0.002 Å |
| b |
7.7159 ± 0.0007 Å |
| c |
5.9918 ± 0.0006 Å |
| α |
90° |
| β |
91.434 ± 0.002° |
| γ |
90° |
| Cell volume |
1037.45 ± 0.17 Å3 |
| Cell temperature |
183 ± 2 K |
| Ambient diffraction temperature |
183 ± 2 K |
| Number of distinct elements |
3 |
| Space group number |
14 |
| Hermann-Mauguin space group symbol |
P 1 21/c 1 |
| Hall space group symbol |
-P 2ybc |
| Residual factor for all reflections |
0.0485 |
| Residual factor for significantly intense reflections |
0.0438 |
| Weighted residual factors for significantly intense reflections |
0.1376 |
| Weighted residual factors for all reflections included in the refinement |
0.1511 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.114 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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