Information card for entry 4001813
| Formula |
Cd Cs2 Se8 Sn3 |
| Calculated formula |
Cd Cs2 Se8 Sn3 |
| Title of publication |
Cs2MIIMIV3Q8(Q = S, Se, Te): An Extensive Family of Layered Semiconductors with Diverse Band Gaps |
| Authors of publication |
Morris, Collin D.; Li, Hao; Jin, Hosub; Malliakas, Christos D.; Peters, John A.; Trikalitis, Pantelis N.; Freeman, Arthur J.; Wessels, Bruce W.; Kanatzidis, Mercouri G. |
| Journal of publication |
Chemistry of Materials |
| Year of publication |
2013 |
| Journal volume |
25 |
| Journal issue |
16 |
| Pages of publication |
3344 |
| a |
7.9335 ± 0.0004 Å |
| b |
12.7336 ± 0.0009 Å |
| c |
18.5387 ± 0.001 Å |
| α |
90° |
| β |
90° |
| γ |
90° |
| Cell volume |
1872.82 ± 0.19 Å3 |
| Cell temperature |
293 ± 2 K |
| Ambient diffraction temperature |
293 ± 2 K |
| Number of distinct elements |
4 |
| Space group number |
19 |
| Hermann-Mauguin space group symbol |
P 21 21 21 |
| Hall space group symbol |
P 2ac 2ab |
| Residual factor for all reflections |
0.0857 |
| Residual factor for significantly intense reflections |
0.0621 |
| Weighted residual factors for significantly intense reflections |
0.1267 |
| Weighted residual factors for all reflections included in the refinement |
0.137 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.064 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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