Information card for entry 4002207
| Formula |
C28 H28 S2 |
| Calculated formula |
C28 H28 S2 |
| SMILES |
s1c2cc(c3ccccc3)ccc2c2sc3cc(ccc3c12)CCCCCCCC |
| Title of publication |
Effects of Substituted Alkyl Chain Length on Solution-Processable Layered Organic Semiconductor Crystals |
| Authors of publication |
Inoue, Satoru; Minemawari, Hiromi; Tsutsumi, Jun’ya; Chikamatsu, Masayuki; Yamada, Toshikazu; Horiuchi, Sachio; Tanaka, Mutsuo; Kumai, Reiji; Yoneya, Makoto; Hasegawa, Tatsuo |
| Journal of publication |
Chemistry of Materials |
| Year of publication |
2015 |
| Journal volume |
27 |
| Journal issue |
11 |
| Pages of publication |
3809 |
| a |
6.0861 ± 0.0002 Å |
| b |
7.804 ± 0.0003 Å |
| c |
49.128 ± 0.001 Å |
| α |
90° |
| β |
97.199 ± 0.001° |
| γ |
90° |
| Cell volume |
2314.99 ± 0.13 Å3 |
| Cell temperature |
300 K |
| Ambient diffraction temperature |
300 K |
| Number of distinct elements |
3 |
| Space group number |
14 |
| Hermann-Mauguin space group symbol |
P 1 21/a 1 |
| Hall space group symbol |
-P 2yab |
| Residual factor for all reflections |
0.0839 |
| Residual factor for significantly intense reflections |
0.0771 |
| Weighted residual factors for significantly intense reflections |
0.2264 |
| Weighted residual factors for all reflections included in the refinement |
0.244 |
| Goodness-of-fit parameter for all reflections included in the refinement |
1.15 |
| Diffraction radiation wavelength |
1.5528 Å |
| Diffraction radiation type |
synchrotron |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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The link is:
https://www.crystallography.net/4002207.html
