Information card for entry 4003138

Structure parameters

• Formula: As12 Eu11 Sn2 Zn4
• Calculated formula: As12 Eu11 Sn2 Zn4
• Title of publication: Eu11Zn4Sn2As12: A Ferromagnetic Zintl Semiconductor with a Layered Structure Featuring Extended Zn4As6 Sheets and Ethane-like Sn2As6 Units
• Authors of publication: Devlin, Kasey P.; Kazem, Nasrin; Zaikina, Julia V.; Cooley, Joya A.; Badger, Jackson R.; Fettinger, James C.; Taufour, Valentin; Kauzlarich, Susan M.
• Journal of publication: Chemistry of Materials
• Year of publication: 2018
• Journal volume: 30
• Journal issue: 20
• Pages of publication: 7067
• a: 7.5679 ± 0.0004 Å
• b: 13.0883 ± 0.0006 Å
• c: 31.3052 ± 0.0015 Å
• α: 90°
• β: 94.8444 ± 0.0007°
• γ: 90°
• Cell volume: 3089.7 ± 0.3 ų
• Cell temperature: 93 ± 2 K
• Ambient diffraction temperature: 93 ± 2 K
• Number of distinct elements: 4
• Space group number: 15
• Hermann-Mauguin space group symbol: C 1 2/c 1
• Hall space group symbol: -C 2yc
• Residual factor for all reflections: 0.0398
• Residual factor for significantly intense reflections: 0.0304
• Weighted residual factors for significantly intense reflections: 0.0602
• Weighted residual factors for all reflections included in the refinement: 0.0633
• Goodness-of-fit parameter for all reflections included in the refinement: 1.103
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No