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Information card for entry 4003352
Preview
| Coordinates | 4003352.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | B3 Cs O7 Si |
|---|---|
| Calculated formula | B3 Cs O7 Si |
| Title of publication | CsSiB3O7: A Beryllium-Free Deep-Ultraviolet Nonlinear Optical Material Discovered by the Combination of Electron Diffraction and First-Principles Calculations |
| Authors of publication | Zhou, Zhengyang; Qiu, Yi; Liang, Fei; Palatinus, Lukáš; Poupon, Morgane; Yang, Tao; Cong, Rihong; Lin, Zheshuai; Sun, Junliang |
| Journal of publication | Chemistry of Materials |
| Year of publication | 2018 |
| Journal volume | 30 |
| Journal issue | 7 |
| Pages of publication | 2203 |
| a | 9.2171 Å |
| b | 10.027 Å |
| c | 6.9348 Å |
| α | 90° |
| β | 90° |
| γ | 90° |
| Cell volume | 640.913 Å3 |
| Cell temperature | 293 K |
| Ambient diffraction temperature | 293 K |
| Number of distinct elements | 4 |
| Space group number | 33 |
| Hermann-Mauguin space group symbol | P n a 21 |
| Hall space group symbol | P 2c -2n |
| Residual factor for all reflections | 0.104 |
| Residual factor for significantly intense reflections | 0.0961 |
| Weighted residual factors for significantly intense reflections | 0.102 |
| Weighted residual factors for all reflections included in the refinement | 0.1024 |
| Goodness-of-fit parameter for significantly intense reflections | 4.56 |
| Goodness-of-fit parameter for all reflections included in the refinement | 4.34 |
| Diffraction radiation probe | electron |
| Diffraction radiation wavelength | 0.0335 Å |
| Diffraction radiation type | electron |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
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