Information card for entry 4003542
| Formula |
C18 H42 In N9 |
| Calculated formula |
C18 H36 In N8 |
| Title of publication |
In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition |
| Authors of publication |
O’Brien, Nathan J.; Rouf, Polla; Samii, Rouzbeh; Rönnby, Karl; Buttera, Sydney C.; Hsu, Chih-Wei; Ivanov, Ivan G.; Kessler, Vadim; Ojamäe, Lars; Pedersen, Henrik |
| Journal of publication |
Chemistry of Materials |
| Year of publication |
2020 |
| a |
17.575 ± 0.008 Å |
| b |
16.067 ± 0.007 Å |
| c |
9.31 ± 0.004 Å |
| α |
90° |
| β |
90° |
| γ |
90° |
| Cell volume |
2629 ± 2 Å3 |
| Cell temperature |
296 ± 2 K |
| Ambient diffraction temperature |
296 ± 2 K |
| Number of distinct elements |
4 |
| Space group number |
62 |
| Hermann-Mauguin space group symbol |
P n m a |
| Hall space group symbol |
-P 2ac 2n |
| Residual factor for all reflections |
0.1061 |
| Residual factor for significantly intense reflections |
0.0945 |
| Weighted residual factors for significantly intense reflections |
0.2309 |
| Weighted residual factors for all reflections included in the refinement |
0.2368 |
| Goodness-of-fit parameter for all reflections included in the refinement |
0.986 |
| Diffraction radiation wavelength |
0.71073 Å |
| Diffraction radiation type |
MoKα |
| Has coordinates |
Yes |
| Has disorder |
No |
| Has Fobs |
No |
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https://www.crystallography.net/4003542.html
