Information card for entry 4065160

Structure parameters

• Formula: C36 H82 K N3 Si3 W
• Calculated formula: C36 H82 K N3 Si3 W
• SMILES: [WH](=N[Si](C(C)(C)C)(C(C)(C)C)C(C)(C)C)(=N[Si](C(C)(C)C)(C(C)(C)C)C(C)(C)C)=N[Si](C(C)(C)C)(C(C)(C)C)C(C)(C)C.[K+]
• Title of publication: Reactivity Studies of (tBu3SiNH)(tBu3SiN═)2WH Including Anionic Derivatives Featuring the Tris-tri-tert-butylsilylimide Tungsten Core
• Authors of publication: Schafer, Daniel F.; Wolczanski, Peter T.; Lobkovsky, Emil B.
• Journal of publication: Organometallics
• Year of publication: 2011
• Journal volume: 30
• Journal issue: 24
• Pages of publication: 6539
• a: 12.941 ± 0.001 Å
• b: 13.103 ± 0.001 Å
• c: 16.293 ± 0.001 Å
• α: 70.85 ± 0.04°
• β: 71.47 ± 0.04°
• γ: 62.55 ± 0.03°
• Cell volume: 2269.8 ± 0.8 ų
• Cell temperature: 295 ± 2 K
• Ambient diffraction temperature: 295 ± 2 K
• Number of distinct elements: 6
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0671
• Residual factor for significantly intense reflections: 0.0581
• Weighted residual factors for all reflections: 0.1661
• Weighted residual factors for significantly intense reflections: 0.15
• Goodness-of-fit parameter for all reflections: 1.041
• Goodness-of-fit parameter for significantly intense reflections: 1.037
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No