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Information card for entry 4066286
Preview
| Coordinates | 4066286.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | C32 H65 Br Si6 Sn |
|---|---|
| Calculated formula | C32 H65 Br Si6 Sn |
| SMILES | [Sn]1(Br)(C=CCC=C1)c1c(cc(cc1C([Si](C)(C)C)[Si](C)(C)C)C([Si](C)(C)C)[Si](C)(C)C)C([Si](C)(C)C)[Si](C)(C)C |
| Title of publication | Generation of Stannabenzenes and Their Properties† |
| Authors of publication | Mizuhata, Yoshiyuki; Noda, Naoya; Tokitoh, Norihiro |
| Journal of publication | Organometallics |
| Year of publication | 2010 |
| Journal volume | 29 |
| Journal issue | 21 |
| Pages of publication | 4781 |
| a | 9.374 ± 0.0002 Å |
| b | 11.1189 ± 0.0002 Å |
| c | 21.3761 ± 0.0005 Å |
| α | 78.5572 ± 0.0009° |
| β | 82.2289 ± 0.0016° |
| γ | 76.0175 ± 0.0014° |
| Cell volume | 2110.07 ± 0.08 Å3 |
| Cell temperature | 103 ± 2 K |
| Ambient diffraction temperature | 103 ± 2 K |
| Number of distinct elements | 5 |
| Space group number | 2 |
| Hermann-Mauguin space group symbol | P -1 |
| Hall space group symbol | -P 1 |
| Residual factor for all reflections | 0.0332 |
| Residual factor for significantly intense reflections | 0.0307 |
| Weighted residual factors for significantly intense reflections | 0.077 |
| Weighted residual factors for all reflections included in the refinement | 0.0792 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.091 |
| Diffraction radiation wavelength | 0.71069 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
For the version history of this entry, please navigate to main COD server.
The link is: https://www.crystallography.net/4066286.html
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Users of the data should acknowledge the original authors of the
structural data.