Information card for entry 4070069

Structure parameters

• Formula: C32 H51 N3 O2 Ru Si2
• Calculated formula: C32 H51 N3 O2 Ru Si2
• SMILES: [Ru]1(N=O)(Oc2ccccc2)([n]2ccc(cc2c2cc(cc[n]12)C(C)(C)C)C(C)(C)C)(C[Si](C)(C)C)C[Si](C)(C)C
• Title of publication: Synthesis, Structures, and Reactivity of Ruthenium(II) Nitrosyl Tri- and Dialkyl Complexes
• Authors of publication: Chan, Ka-Wang; Huang, Enrique Kwan; Williams, Ian D.; Leung, Wa-Hung
• Journal of publication: Organometallics
• Year of publication: 2009
• Journal volume: 28
• Journal issue: 19
• Pages of publication: 5794
• a: 11.2783 ± 0.0003 Å
• b: 12.2593 ± 0.0003 Å
• c: 13.1456 ± 0.0004 Å
• α: 74.922 ± 0.002°
• β: 87.476 ± 0.002°
• γ: 89.221 ± 0.002°
• Cell volume: 1753.28 ± 0.08 ų
• Cell temperature: 173 ± 2 K
• Ambient diffraction temperature: 173 ± 2 K
• Number of distinct elements: 6
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0219
• Residual factor for significantly intense reflections: 0.0213
• Weighted residual factors for significantly intense reflections: 0.0555
• Weighted residual factors for all reflections included in the refinement: 0.056
• Goodness-of-fit parameter for all reflections included in the refinement: 1.048
• Diffraction radiation wavelength: 1.54178 Å
• Diffraction radiation type: CuKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No