Information card for entry 4074166

Structure parameters

• Formula: C69 H65 N4 Rh Si
• Calculated formula: C69 H65 N4 Rh Si
• SMILES: [Rh]123([Si](c4ccccc4)(c4ccccc4)C)n4c5=C(c6[n]3c(=C(c3n2c(C(=c2[n]1c(C(=c4cc5)c1c(cc(cc1C)C)C)cc2)c1c(cc(cc1C)C)C)cc3)c1c(cc(cc1C)C)C)cc6)c1c(cc(cc1C)C)C
• Title of publication: Facile Synthesis of Rhodium(III) Porphyrin Silyls by Silicon−Hydrogen Bond Activation with Rhodium(III) Porphyrin Halides and Methyls
• Authors of publication: Zhang, Lirong; Chan, Kin Shing
• Journal of publication: Organometallics
• Year of publication: 2006
• Journal volume: 25
• Journal issue: 20
• Pages of publication: 4822
• a: 21.854 ± 0.004 Å
• b: 17.372 ± 0.004 Å
• c: 14.901 ± 0.003 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 5657 ± 2 ų
• Cell temperature: 293 ± 2 K
• Ambient diffraction temperature: 293 ± 2 K
• Number of distinct elements: 5
• Space group number: 33
• Hermann-Mauguin space group symbol: P n a 21
• Hall space group symbol: P 2c -2n
• Residual factor for all reflections: 0.086
• Residual factor for significantly intense reflections: 0.0664
• Weighted residual factors for significantly intense reflections: 0.1418
• Weighted residual factors for all reflections included in the refinement: 0.1512
• Goodness-of-fit parameter for all reflections included in the refinement: 1.105
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No