Information card for entry 4074236

Structure parameters

• Formula: C32 H22 Co4 O13 Si2
• Calculated formula: C32 H22 Co4 O13 Si2
• SMILES: [C]12([Co]3(C#[O])(C#[O])(C#[O])[Co]1(C#[O])([C]=23c1ccccc1)(C#[O])C#[O])[Si](O[Si]([C]12=[C]3(c4ccccc4)[Co]1(C#[O])(C#[O])(C#[O])[Co]23(C#[O])(C#[O])C#[O])(C)C)(C)C
• Title of publication: Cobalt-Assisted Silicon−Silicon Bond Activation
• Authors of publication: Zirngast, Michaela; Marschner, Christoph; Baumgartner, Judith
• Journal of publication: Organometallics
• Year of publication: 2006
• Journal volume: 25
• Journal issue: 20
• Pages of publication: 4897
• a: 28.608 ± 0.006 Å
• b: 9.0551 ± 0.0018 Å
• c: 15.553 ± 0.003 Å
• α: 90°
• β: 113.67 ± 0.03°
• γ: 90°
• Cell volume: 3690 ± 1.5 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 5
• Space group number: 15
• Hermann-Mauguin space group symbol: C 1 2/c 1
• Hall space group symbol: -C 2yc
• Residual factor for all reflections: 0.0786
• Residual factor for significantly intense reflections: 0.0711
• Weighted residual factors for significantly intense reflections: 0.1414
• Weighted residual factors for all reflections included in the refinement: 0.1446
• Goodness-of-fit parameter for all reflections included in the refinement: 1.314
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No