Information card for entry 4074240

Structure parameters

• Formula: C13 Co4 Ge O13
• Calculated formula: C13 Co4 Ge O13
• SMILES: [Co]12([Co]3([Co]1([Ge]23[Co](C#[O])(C#[O])(C#[O])C#[O])(C#[O])(C#[O])C#[O])(C#[O])(C#[O])C#[O])(C#[O])(C#[O])C#[O]
• Title of publication: Cobalt-Assisted Silicon−Silicon Bond Activation
• Authors of publication: Zirngast, Michaela; Marschner, Christoph; Baumgartner, Judith
• Journal of publication: Organometallics
• Year of publication: 2006
• Journal volume: 25
• Journal issue: 20
• Pages of publication: 4897
• a: 7.9782 ± 0.0016 Å
• b: 16.02 ± 0.003 Å
• c: 16.653 ± 0.003 Å
• α: 72.76 ± 0.03°
• β: 77.3 ± 0.03°
• γ: 78.54 ± 0.03°
• Cell volume: 1962.6 ± 0.7 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 4
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0594
• Residual factor for significantly intense reflections: 0.0545
• Weighted residual factors for significantly intense reflections: 0.1416
• Weighted residual factors for all reflections included in the refinement: 0.1447
• Goodness-of-fit parameter for all reflections included in the refinement: 1.085
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No