Information card for entry 4074270

Structure parameters

• Formula: C17 H36 P Rh Si
• Calculated formula: C17 H36 P Rh Si
• SMILES: [cH]12[cH]3[cH]4[cH]5[cH]1[RhH]2345([P](C)(C)C)[Si](C(C)C)(C(C)C)C(C)C
• Title of publication: Comparisons of Photoinduced Oxidative Addition of B−H, B−B, and Si−H Bonds at Rhodium(η5-cyclopentadienyl)phosphine Centers
• Authors of publication: Câmpian, Marius V.; Harris, Jeremy L.; Jasim, Naser; Perutz, Robin N.; Marder, Todd B.; Whitwood, Adrian C.
• Journal of publication: Organometallics
• Year of publication: 2006
• Journal volume: 25
• Journal issue: 21
• Pages of publication: 5093
• a: 8.6515 ± 0.0004 Å
• b: 10.4606 ± 0.0005 Å
• c: 12.1019 ± 0.0006 Å
• α: 74.981 ± 0.001°
• β: 71.512 ± 0.001°
• γ: 72.05 ± 0.001°
• Cell volume: 972.2 ± 0.08 ų
• Cell temperature: 110 ± 2 K
• Ambient diffraction temperature: 110 ± 2 K
• Number of distinct elements: 5
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0166
• Residual factor for significantly intense reflections: 0.0158
• Weighted residual factors for significantly intense reflections: 0.0407
• Weighted residual factors for all reflections included in the refinement: 0.0409
• Goodness-of-fit parameter for all reflections included in the refinement: 1.049
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No