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Information card for entry 4075267
Preview
| Coordinates | 4075267.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | C35 H59 Cl N3 Si2 Ti |
|---|---|
| Calculated formula | C35 H59 Cl N3 Si2 Ti |
| SMILES | [Ti]1(Cl)([N](=C(C=C(N1c1c(cccc1C(C)C)C(C)C)C)C)c1c(cccc1C(C)C)C(C)C)N([Si](C)(C)C)[Si](C)(C)C |
| Title of publication | Terminal Titanium(IV) (Trimethylsilyl)imides Prepared by Oxidatively Induced Trimethylsilyl Abstraction |
| Authors of publication | Bailey, Brad C.; Basuli, Falguni; Huffman, John C.; Mindiola, Daniel J. |
| Journal of publication | Organometallics |
| Year of publication | 2006 |
| Journal volume | 25 |
| Journal issue | 11 |
| Pages of publication | 2725 |
| a | 20.628 ± 0.003 Å |
| b | 18.05 ± 0.003 Å |
| c | 20.269 ± 0.003 Å |
| α | 90° |
| β | 90° |
| γ | 90° |
| Cell volume | 7547 ± 2 Å3 |
| Cell temperature | 125 ± 2 K |
| Ambient diffraction temperature | 125 ± 2 K |
| Number of distinct elements | 6 |
| Space group number | 60 |
| Hermann-Mauguin space group symbol | P b c n |
| Hall space group symbol | -P 2n 2ab |
| Residual factor for all reflections | 0.0651 |
| Residual factor for significantly intense reflections | 0.0331 |
| Weighted residual factors for significantly intense reflections | 0.0746 |
| Weighted residual factors for all reflections included in the refinement | 0.0854 |
| Goodness-of-fit parameter for all reflections included in the refinement | 0.952 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
For the version history of this entry, please navigate to main COD server.
The link is: https://www.crystallography.net/4075267.html
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Users of the data should acknowledge the original authors of the
structural data.