Information card for entry 4075587

Structure parameters

• Formula: C17 H45 I N2 Si4 Sn
• Calculated formula: C17 H45 I N2 Si4 Sn
• SMILES: I[Sn](N([Si](C)(C)C)[Si](C)(C)C)(N([Si](C)(C)C)[Si](C)(C)C)C1CCCC1
• Title of publication: Tin-Mediated CH Activation and Cross-Coupling in a Single Flask
• Authors of publication: Bartolin, Jeffrey M.; Kavara, Ajdin; Kampf, Jeff; Banaszak Holl, Mark M.
• Journal of publication: Organometallics
• Year of publication: 2006
• Journal volume: 25
• Journal issue: 20
• Pages of publication: 4738
• a: 13.481 ± 0.002 Å
• b: 17.536 ± 0.003 Å
• c: 23.734 ± 0.004 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 5610.8 ± 1.6 ų
• Cell temperature: 123 ± 2 K
• Ambient diffraction temperature: 123 ± 2 K
• Number of distinct elements: 6
• Space group number: 61
• Hermann-Mauguin space group symbol: P b c a
• Hall space group symbol: -P 2ac 2ab
• Residual factor for all reflections: 0.0243
• Residual factor for significantly intense reflections: 0.0202
• Weighted residual factors for significantly intense reflections: 0.0475
• Weighted residual factors for all reflections included in the refinement: 0.0493
• Goodness-of-fit parameter for all reflections included in the refinement: 1.104
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No