Information card for entry 4076245

Structure parameters

• Formula: C96 H106 K2 O10 Si4
• Calculated formula: C96 H106 K2 O10 Si4
• SMILES: [K]123[OH][Si]4(O[Si]([OH]2)([OH][K]2([OH][Si]([OH]1)(c1c(c5c(C)cc(cc5C)C)cccc1c1c(cc(cc1C)C)C)O[Si](O3)([OH]2)c1c(c2c(cc(C)cc2C)C)cccc1c1c(cc(cc1C)C)C)O4)c1c(c2c(C)cc(cc2C)C)cccc1c1c(C)cc(C)cc1C)c1c(c2c(cc(cc2C)C)C)cccc1c1c(cc(cc1C)C)C
• Title of publication: Selective Formation of Functionalized Disiloxanes from Terphenylfluorosilanes
• Authors of publication: Pietschnig, Rudolf; Merz, Klaus
• Journal of publication: Organometallics
• Year of publication: 2004
• Journal volume: 23
• Journal issue: 6
• Pages of publication: 1373
• a: 30.03 ± 0.03 Å
• b: 45.54 ± 0.05 Å
• c: 12.788 ± 0.011 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 17488 ± 3 ų
• Cell temperature: 213 ± 2 K
• Ambient diffraction temperature: 213 ± 2 K
• Number of distinct elements: 5
• Space group number: 43
• Hermann-Mauguin space group symbol: F d d 2
• Hall space group symbol: F 2 -2d
• Residual factor for all reflections: 0.0828
• Residual factor for significantly intense reflections: 0.0514
• Weighted residual factors for significantly intense reflections: 0.1239
• Weighted residual factors for all reflections included in the refinement: 0.1424
• Goodness-of-fit parameter for all reflections included in the refinement: 1.059
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No