Information card for entry 4077619

Structure parameters

• Formula: C30 H72 Cu P3 Si Te
• Calculated formula: C30 H72 Cu P3 Si Te
• SMILES: [Te]([Cu]([P](CCC)(CCC)CCC)([P](CCC)(CCC)CCC)[P](CCC)(CCC)CCC)[Si](C)(C)C
• Title of publication: Synthesis and Characterization of Tris(trialkylphosphine)copper(I)trimethylsilylchalcogenolates
• Authors of publication: Tran, Diem T. T.; Corrigan, John F.
• Journal of publication: Organometallics
• Year of publication: 2000
• Journal volume: 19
• Journal issue: 24
• Pages of publication: 5202
• a: 10.912 ± 0.0002 Å
• b: 11.136 ± 0.0002 Å
• c: 17.54 ± 0.0002 Å
• α: 95.014 ± 0.0011°
• β: 97.08 ± 0.0011°
• γ: 102.223 ± 0.0011°
• Cell volume: 2052.99 ± 0.06 ų
• Cell temperature: 200 ± 2 K
• Ambient diffraction temperature: 200 ± 2 K
• Number of distinct elements: 6
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0401
• Residual factor for significantly intense reflections: 0.0342
• Weighted residual factors for significantly intense reflections: 0.0857
• Weighted residual factors for all reflections included in the refinement: 0.0899
• Goodness-of-fit parameter for all reflections included in the refinement: 1.069
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No