Information card for entry 4078351

Structure parameters

• Formula: C34 H52 Si
• Calculated formula: C34 H52 Si
• SMILES: [Si]1(c2c(cc(cc2C(C)(C)C)C(C)(C)C)C(C1)(C)C)(C(C)(C)C)/C=C(c1ccccc1)/C(C)(C)C
• Title of publication: Synthesis and Reactivity of Several Stable 1-Silaallenes
• Authors of publication: Trommer, Martin; Miracle, Gary E.; Eichler, Barrett E.; Powell, Douglas R.; West, Robert
• Journal of publication: Organometallics
• Year of publication: 1997
• Journal volume: 16
• Journal issue: 26
• Pages of publication: 5737
• a: 13.982 ± 0.004 Å
• b: 16.842 ± 0.009 Å
• c: 26.031 ± 0.007 Å
• α: 90°
• β: 90°
• γ: 90°
• Cell volume: 6130 ± 4 ų
• Cell temperature: 123 ± 2 K
• Ambient diffraction temperature: 123 ± 2 K
• Number of distinct elements: 3
• Space group number: 61
• Hermann-Mauguin space group symbol: P b c a
• Hall space group symbol: -P 2ac 2ab
• Residual factor for all reflections: 0.1603
• Residual factor for significantly intense reflections: 0.1076
• Weighted residual factors for all reflections: 0.3715
• Weighted residual factors for significantly intense reflections: 0.2998
• Goodness-of-fit parameter for all reflections: 1.294
• Goodness-of-fit parameter for significantly intense reflections: 1.337
• Diffraction radiation wavelength: 1.54178 Å
• Diffraction radiation type: CuKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No