Information card for entry 4079474

Structure parameters

• Formula: C25 H35 Bi N4 O Si2
• Calculated formula: C25 H35 Bi N4 O Si2
• SMILES: [Bi]12([O]=C(N2c2ccccc2)N(C)C)N([Si](C)(C)C)c2c3c(N1[Si](C)(C)C)cccc3ccc2
• Title of publication: Organobismuth(III) and Dibismuthine Complexes Bearing N,N′-Disubstituted 1,8-Diaminonaphthalene Ligand: Synthesis, Structure, and Reactivity
• Authors of publication: Nekoueishahraki, Bijan; Samuel, Prinson P.; Roesky, Herbert W.; Stern, Daniel; Matussek, Julia; Stalke, Dietmar
• Journal of publication: Organometallics
• Year of publication: 2012
• Journal volume: 31
• Journal issue: 18
• Pages of publication: 6697
• a: 12.3288 ± 0.0012 Å
• b: 13.4105 ± 0.0013 Å
• c: 16.9898 ± 0.0016 Å
• α: 88.095 ± 0.001°
• β: 85.964 ± 0.002°
• γ: 78.135 ± 0.001°
• Cell volume: 2741.7 ± 0.5 ų
• Cell temperature: 100 ± 2 K
• Ambient diffraction temperature: 100 ± 2 K
• Number of distinct elements: 6
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0204
• Residual factor for significantly intense reflections: 0.0164
• Weighted residual factors for significantly intense reflections: 0.033
• Weighted residual factors for all reflections included in the refinement: 0.0339
• Goodness-of-fit parameter for all reflections included in the refinement: 1.025
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: No
• Has Fobs: No