Information card for entry 4079897

Structure parameters

• Common name: Si(ONO-SQ)2
• Chemical name: Bis[2-(3,5-di-tert-butyl-o-quinoneiminosemiquinonato)- 4,6-di-tert-butylphenoxy]silicon(IV)
• Formula: C56 H80 N2 O4 Si
• Calculated formula: C56 H80 N2 O4 Si
• Title of publication: Migrations of Alkyl and Aryl Groups from Silicon to Nitrogen in Silylated Aryloxyiminoquinones
• Authors of publication: Shekar, Sukesh; Brown, Seth N.
• Journal of publication: Organometallics
• Year of publication: 2013
• Journal volume: 32
• Journal issue: 2
• Pages of publication: 556
• a: 11.1944 ± 0.001 Å
• b: 12.1836 ± 0.0011 Å
• c: 20.7527 ± 0.0018 Å
• α: 90.909 ± 0.002°
• β: 104.408 ± 0.002°
• γ: 103.912 ± 0.002°
• Cell volume: 2652.3 ± 0.4 ų
• Cell temperature: 120 ± 2 K
• Ambient diffraction temperature: 120 ± 2 K
• Number of distinct elements: 5
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.059
• Residual factor for significantly intense reflections: 0.0432
• Weighted residual factors for significantly intense reflections: 0.1082
• Weighted residual factors for all reflections included in the refinement: 0.1195
• Goodness-of-fit parameter for all reflections included in the refinement: 1.004
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No