Information card for entry 4081794

Structure parameters

• Common name: Tip2Si=SiTipTMOP
• Chemical name: 1,1,2-Tris(2,4,6-triisopropylphenyl)-2-(2,4,6-trimethoxyphenyl)disilene
• Formula: C54 H80 O3 Si2
• Calculated formula: C54 H80 O3 Si2
• SMILES: [Si](=[Si](c1c(cc(cc1C(C)C)C(C)C)C(C)C)c1c(cc(cc1C(C)C)C(C)C)C(C)C)(c1c(cc(cc1C(C)C)C(C)C)C(C)C)c1c(cc(cc1OC)OC)OC
• Title of publication: Potential Protecting Group Strategy for Disila Analogues of Vinyllithiums: Synthesis and Reactivity of a 2,4,6-Trimethoxyphenyl-Substituted Disilene
• Authors of publication: Meltzer, Antje; Majumdar, Moumita; White, Andrew J. P.; Huch, Volker; Scheschkewitz, David
• Journal of publication: Organometallics
• Year of publication: 2013
• Journal volume: 32
• Journal issue: 22
• Pages of publication: 6844
• a: 13.4402 ± 0.0004 Å
• b: 14.0958 ± 0.0006 Å
• c: 15.3783 ± 0.0005 Å
• α: 93.628 ± 0.003°
• β: 100.148 ± 0.003°
• γ: 115.006 ± 0.003°
• Cell volume: 2567.85 ± 0.18 ų
• Cell temperature: 173 K
• Ambient diffraction temperature: 173 K
• Number of distinct elements: 4
• Space group number: 2
• Hermann-Mauguin space group symbol: P -1
• Hall space group symbol: -P 1
• Residual factor for all reflections: 0.0679
• Residual factor for significantly intense reflections: 0.051
• Weighted residual factors for significantly intense reflections: 0.132
• Weighted residual factors for all reflections included in the refinement: 0.1438
• Goodness-of-fit parameter for all reflections included in the refinement: 1.035
• Diffraction radiation wavelength: 0.71073 Å
• Diffraction radiation type: MoKα
• Has coordinates: Yes
• Has disorder: Yes
• Has Fobs: No